PNP TRANSISTOR

[DONG GUAN SHI HUA YUAN ELECTRON CO.,LTD.] TRANSISTOR（ PNP ） FEATURES Power dissipation PCM: 0.2 W（Tamb=25℃） Collector current ICM: -0.2 A Collector-base voltage V (BR) CBO: -60 V Operating and storage junction temperature range TJ，Tstg: -55℃ t

文件：313.35 Kbytes 頁數(shù)：2 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

TRANSISTOR(PNP)

FEATURES Low Collector Current Low Collector Power Dissipation

文件：300.42 Kbytes 頁數(shù)：1 Pages

HTSEMI

金譽半導(dǎo)體

FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type)

FOR LOW FREQUENCY AMPLIFY APPLICATION FEATURE ? Super mini package for easy mounting ?Excellent linearity of DC forward gain ?Small collector to emitter saturation voltage VCE(sat)=-0.3V max APPLICATION For Hybrid IC,small type machine low frequency voltage Amplify appli

文件：180.95 Kbytes 頁數(shù)：5 Pages

ISAHAYA

諫早電子

SOT-23 Plastic-Encapsulate Transistors

FEATURES Power dissipation PCM : 0.2 W（ Tamb=25℃） Collector current ICM: -0.2 A Collector-base voltage V(BR) CBO: -60 V Operating and storage junction temperature range TJ， Tstg: -55℃ to +150℃

文件：854.34 Kbytes 頁數(shù)：4 Pages

JIANGSU

長電科技

PNP Silicon Plastic Encapsulated Transistor

FEATURES Low Collector Current Low Collector Power Dissipation

文件：109.17 Kbytes 頁數(shù)：1 Pages

SECOS

喜可士

絲?。?a target="_blank" title="Marking" href="/me/mf/mg/marking.html">ME/MF/MG；Package：SOT-23；PNP epitaxial type transistor designed for low frequency.

FEATURES ● Small collector to emitter saturation voltage VCE(sat)=-0.3V max(@IC=-100mA,IB=-10mA). ● Excellent lineary DC forward current gain. ● Super mini package for easy mounting. APPLICATIONS ● PNP epitaxial type transistor designed for low frequency. ● Voltage amplify application.

文件：1.0584 Mbytes 頁數(shù)：2 Pages

LUGUANG

魯光電子

SOT-23 Plastic-Encapsulate Transistors

FEATURES ? Low Collector Current ? Low Collector Power Dissipation

文件：1.62201 Mbytes 頁數(shù)：4 Pages

DGNJDZ

南晶電子

TRANSISTOR (PNP)

FEATURES Power dissipation PCM : 0.2 W (Tamb=25℃) Collector current ICM : -0.2 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：136.14 Kbytes 頁數(shù)：1 Pages

WINNERJOIN

永而佳

絲?。?a target="_blank" title="Marking" href="/me/marking.html">ME；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES ● Small collector to emitter saturation voltage VCE(sat)=-0.3V max(@IC=-100mA,IB=-10mA). ● Excellent lineary DC forward current gain. ● Super mini package for easy mounting. APPLICATIONS ● PNP epitaxial type transistor designed for low frequency. ● Voltage amplify application.

文件：135.71 Kbytes 頁數(shù)：3 Pages

BILIN

銀河微電

Plastic-Encapsulate Transistors

Features ? Low Collector Current ? Low Collector Power Dissipation

文件：1.36869 Mbytes 頁數(shù)：3 Pages

GWSEMI

唯圣電子