TRANSISTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)

Strobe Flash Applications Medium Power Amplifier Applications ? High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = ?1 V, IC = ?0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = ?1 V, IC = ?4 A) ? Low saturation voltage : VCE (sat) = ?0.5 V (max) (IC = ?2

文件：153.24 Kbytes 頁數(shù)：2 Pages

TOSHIBA

東芝

TO-92L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● High DC Current Gain and Excellent hFE Linearity ● Low Saturation Voltage

文件：4.5647 Mbytes 頁數(shù)：3 Pages

JIANGSU

長電科技

TRANSISTOR (PNP)

FEATURE Power dissipation PCM : 0.9 W (Tamb=25℃) Collector current ICM: -2A Collector-base voltage V(BR)CBO: -20 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：131.81 Kbytes 頁數(shù)：1 Pages

WINNERJOIN

永而佳

Silicon PNP transistor in a TO-92LM Plastic Package

Descriptions Silicon PNP transistor in a TO-92LM Plastic Package Features High DC current gain and excellent hFE linearity, low saturation voltage. Applications Strobe flash, medium power amplifier applications.

文件：844.52 Kbytes 頁數(shù)：6 Pages

FOSHAN

藍箭電子

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURE Power dissipation PCM : 0.9 W (Tamb=25℃) Collector current ICM: -2A Collector-base voltage V(BR)CBO: -20 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：64.69 Kbytes 頁數(shù)：1 Pages

TEL

Strobe Flash Applications Medium Power Amplifier Applications

文件：162.95 Kbytes 頁數(shù)：4 Pages

TOSHIBA

東芝

Strobe Flash Applications Medium Power Amplifier Applications

文件：150.17 Kbytes 頁數(shù)：4 Pages

TOSHIBA

東芝

Power transistor for high-speed switching applications

Polarity：PNP\nRoHS Compatible Product(s) (#)：Available Collector Current IC -2 A \nCollector-emitter voltage VCEO -10 V ;

Toshiba

東芝

雙極型三極管

JESTEK

吉思泰

晶體管

JSCJ

長晶科技