Silicon NPN epitaxial planar type(For low-frequency power amplification)

Silicon NPN epitaxial planar type, For low-frequency power amplification, Complementary to 2SA1096 and 2SA1096A Features 1. High collector to emitter voltage VCEO 2. TO-126B package which requires no insulation plate for installation to the heat sink

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PANASONIC

松下

High Collector-Emitter Breakdown Voltage- V(BR)CEO= -60V (Min)

DESCRIPTION ·With TO-126 package ·Complement to type 2SC2497/2SC2497A APPLICATIONS ·For low-frequency power amplification

文件：109.17 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SC2497/2SC2497A APPLICATIONS ·For low-frequency power amplification

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JMNIC

錦美電子

Silicon PNP Power Transistors

DESCRIPTION · With TO-126 package ·Complement to type 2SC2497/2SC2497A APPLICATIONS ·For low-frequency power amplification

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SAVANTIC

Silicon PNP Power Transistor

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

Power Device - Power Transistors - Others

Panasonic

松下

Silicon PNP epitaxial planar type

For low-frequency power amplification\nComplementary to 2SC2497, 2SC2497A\n\n■ ?Output of 5 W can be obtained by a complementary pair with 2SC2497 and 2SC2497A\n?TO-126B package which requires no insulation plate for installation to the heat sink;

Panasonic

松下

Package：TO-225AA，TO-126-3；包裝：帶盒（TB） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS PNP 60V 2A TO126B-A1

PANASONIC

松下