絲?。?strong>2SA1012；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES High Current Switching Applications Low Collector Saturation Voltage High Speed Swithing Time

文件：1.46679 Mbytes 頁數(shù)：4 Pages

DGNJDZ

南晶電子

絲?。?strong>2SA1012；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES High Current Switching Applications Low Collector Saturation Voltage High Speed Swithing Time

文件：1.46679 Mbytes 頁數(shù)：4 Pages

DGNJDZ

南晶電子

TRANSISTOR (PNP)

FEATURES ● HIGH CURRENT SWITCHING APPLICATIONS. ● Low Collector Saturation Voltage : VCE(SAT) = - 0.4V(MAX) at IC= - 3A ● High Speed Swithing Time : tstg = 1.0us (Typ.) ● Complementary to 2SC2562

文件：375.19 Kbytes 頁數(shù)：3 Pages

KOOCHIN

灝展電子

Silicon PNP transistor in a TO-220 Plastic Package.

Descriptions Silicon PNP transistor in a TO-220 Plastic Package. Features Low collector saturation voltage, high speed switching time, complementary to 2SC2562. Applications High current switching applications.

文件：507.76 Kbytes 頁數(shù)：6 Pages

FOSHAN

藍箭電子

Silicon PNP Power Transistor

DESCRIPTION ? Low Collector Saturation Voltage :VCE(sat)= -0.4(V)(Max)@IC= -3A ? High Switching Speed ? Complement to Type 2SC2562 APPLICATIONS ? Designed for high current switching applications.

文件：182.07 Kbytes 頁數(shù)：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220 package ·Complement to type 2SD2562 ·Low saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications

文件：135.91 Kbytes 頁數(shù)：5 Pages

SAVANTIC

PNP Silicon Epitaxial Planar Transistor

PNP Silicon Epitaxial Planar Transistor for high current switching applications. The transistor is subdivided into two group, O and Y, according to its DC current gain.

文件：285.45 Kbytes 頁數(shù)：4 Pages

SEMTECH_ELEC

先之科半導(dǎo)體

POWER TRANSISTORS(5A,50V,25W)

5 AMPERES POWER TRANSISTORS 50 VOLTS 25 WATTS

文件：116.53 Kbytes 頁數(shù)：3 Pages

MOSPEC

統(tǒng)懋

PNP Epitaxial Silicon Transistor

FEATURES ● Low Collector Saturation Voltage. VCE(sat)=-0.4V(Max.)at IC=-3A ● Complements the 2SC2562. ● High Speed Switching Time:tstg=1.0μs(Typ.)

文件：140.56 Kbytes 頁數(shù)：4 Pages

BILIN

銀河微電

isc Silicon PNP Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= -0.4(V)(Max)@IC= -3A ·High Switching Speed ·Complement to Type 2SC2562 APPLICATIONS ·Designed for high current switching applications.

文件：113.95 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電