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          首頁 >2SA>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          2SA1015

          絲?。?a target="_blank" title="Marking" href="/ba/marking.html">BA;Package:SOT-23;Silicon Epitaxial Planar Transistor

          FEATURES ● Complementary To 2SC1815. ● Excellent HFE Linearity. ● High voltage and high current. ● Low noise. ● Collector-Emitter voltage BVCEO=-50V. APPLICATIONS ● Low frequency , low noise amplifier.

          文件:205.91 Kbytes 頁數(shù):4 Pages

          BILIN

          銀河微電

          2SA1015

          TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

          Description Designed for use in driver stage of AF amplifier general purpose amplification.

          文件:215.16 Kbytes 頁數(shù):1 Pages

          DCCOM

          道全

          2SA1015

          isc Silicon PNP Transistor

          DESCRIPTION ? High Voltage and High Current Vceo=-50V(Min.), Ic=-150mA(Max) ? Excellent hFE Linearity ? Low Noise ? Complement to Type 2SC1815 APPLICATIONS ? Audio frequency general purpose amplifier Applications ? Driver stage amplifier applications.

          文件:124.46 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          2SA1015

          TO-92 Plastic-Encapsulate Transistors

          TRANSISTOR (PNP) FEATURES ● Power dissipation

          文件:816.39 Kbytes 頁數(shù):5 Pages

          JIANGSU

          長電科技

          2SA1015

          PNP Transistor

          Features ● High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) ● Low niose: NF=1dB(Typ.) at f=1KHz

          文件:37.74 Kbytes 頁數(shù):1 Pages

          KEXIN

          科信電子

          2SA1015

          PNP SILICON TRANSISTOR

          2SA1015 is PNP silicon planar transistor designed for audio frequency general purpose amplifier applications and driver stage amplifier applications.

          文件:73.45 Kbytes 頁數(shù):1 Pages

          MICRO-ELECTRONICS

          2SA1015

          PNP Silicon Epitaxial Planar Transistor

          PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, L , according to its DC current gain. As complementary type the NPN transistor 2SC1815 is recommended.)

          文件:154.23 Kbytes 頁數(shù):2 Pages

          SEMTECH_ELEC

          先之科半導(dǎo)體

          2SA1015

          PNP EPITAXIAL PLANAR TRANSISTOR

          Description The 2SA1015 is designed for use in driver stage of AF amplifier and general purpose amplification.

          文件:50.74 Kbytes 頁數(shù):3 Pages

          TGS

          2SA1015

          TO-92 Plastic-Encapsulate Transistors

          TRANSISTOR (PNP) ● Power dissipation

          文件:2.58913 Mbytes 頁數(shù):3 Pages

          DGNJDZ

          南晶電子

          2SA1015

          PNP Silicon Epitaxial Planar Transistor

          PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. As complementary type the NPN transistor C1815 is recommended.

          文件:2.0101 Mbytes 頁數(shù):3 Pages

          SKTECHNOLGYSHIKE Electronics

          時(shí)科廣東時(shí)科微實(shí)業(yè)有限公司

          晶體管資料

          • 型號:

            2SA1006B

          • 別名:

            三極管、晶體管、晶體三極管

          • 生產(chǎn)廠家:

          • 制作材料:

            Si-PNP

          • 性質(zhì):

            低頻或音頻放大 (LF)_射頻/高頻放大 (HF)_功率

          • 封裝形式:

            直插封裝

          • 極限工作電壓:

            250V

          • 最大電流允許值:

            1.5A

          • 最大工作頻率:

            80MHZ

          • 引腳數(shù):

            3

          • 可代換的型號:

            2SA1009(A),2SA1133,2SB1236,2SA1397,2SB861,3CA10E,

          • 最大耗散功率:

            25W

          • 放大倍數(shù):

          • 圖片代號:

            B-10

          • vtest:

            250

          • htest:

            80000000

          • atest:

            1.5

          • wtest:

            25

          技術(shù)參數(shù)

          • NPN/PNP:

            PNP

          • Vcbo (V):

            -250

          • VCEO (V):

            -250

          • Vebo (V):

            -5

          • IC (A) @25 °C:

            -1.5

          • VCE(sat) (V) max.:

            -1

          • hFE min.:

            60

          • hFE max.:

            320

          • fT (MHz) typ.:

            80

          • Cob (pF) typ.:

            45

          • Package Type:

            MP-25

          • Production Status:

            EOL announced

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          更多2SA供應(yīng)商 更新時(shí)間2026-1-20 16:00:00
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