20 V, 3 A NPN low VCEsat transistor

General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. PNP complement: 2PB1424. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability: IC and ICM ■ High collector current gain

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PHI

PHI

20 V, 3 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT89 (SC-62/TO-243) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: 2PB1424. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capabil

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恩XP

絲?。?a target="_blank" title="Marking" href="/m2/marking.html">M2；Package：SOT89；20 V, 3 A NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

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NEXPERIA

安世

20 V, 3 A NPN low VCEsat (BISS) transistor

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT89 (SC-62/TO-243) flat lead Surface-Mounted Device (SMD) plastic package.\n PNP complement: 2PB1424. ? Low collector-emitter saturation voltage VCEsat\n? High collector current capability IC and ICM\n? High collector current gain (hFE) at high IC\n? High efficiency due to less heat generation\n? Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n? AEC-Q101 qualifie;

Nexperia

安世

20 V, 3 A NPN low VCEsat (BISS) transistor

文件：143.04 Kbytes 頁數(shù)：13 Pages

PHI

PHI

Package：TO-243AA；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS NPN 20V 3A SOT89

Nexperia USA Inc.