絲印：2P6；Package：DFN4D；TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic

Features Ultra small packag e DFN4D (1.0 mm x 1.0 mm; t 0.3 7 mm (typ.)) Wide range output voltage line up (V OUT = 1.0 to 4.5 V) L ow dropout voltage V DO = 175 mV (typ.) at 3.3 V output, I OUT = 300 mA V DO = 21 6 mV (typ.) at 2.5 V output, I OUT = 300 mA V DO = 2 9 7 mV (typ.) at 1.8 V

文件：749.18 Kbytes 頁數(shù)：20 Pages

TOSHIBA

東芝

絲?。?strong>2P6；Package：DFN5B；800 mA CMOS Ultra Low Dropout Regulator

1. Description The TCR8BM series are CMOS single-output voltage regulators with an on/off control input, featuring ultra low dropout voltage, high PSRR, low inrush current and fast load transient response. A differentiating feature is the use of a secondary bias rail as a reference voltage that

文件：1.18428 Mbytes 頁數(shù)：15 Pages

TOSHIBA

東芝

絲?。?a target="_blank" title="Marking" href="/2p6b/marking.html">2P6B；Package：VSSOP；INA310x –4 V to 110 V, 1.3 MHz, Ultra-Precise Current Sense Amplifier With Open- Drain Comparator and Reference

1 Features ? Wide common-mode voltage: – Operational voltage: ?4 V to +110 V – Survival voltage: ?20 V to +120 V ? High signal bandwidth: 1.3 MHz ? Slew rate: 2.5 V/μs ? Excellent CMRR: 160 dB ? Accuracy – Gain error (maximum) ? Version A: 0.15, 10 ppm/°C drift ? Version B: 0.5, 20 ppm/°

文件：1.77879 Mbytes 頁數(shù)：32 Pages

TI

德州儀器

絲印：2P6B；Package：VSSOP；INA310x –4 V to 110 V, 1.3 MHz, Ultra-Precise Current Sense Amplifier With Open- Drain Comparator and Reference

1 Features ? Wide common-mode voltage: – Operational voltage: ?4 V to +110 V – Survival voltage: ?20 V to +120 V ? High signal bandwidth: 1.3 MHz ? Slew rate: 2.5 V/μs ? Excellent CMRR: 160 dB ? Accuracy – Gain error (maximum) ? Version A: 0.15, 10 ppm/°C drift ? Version B: 0.5, 20 ppm/°

文件：1.77823 Mbytes 頁數(shù)：32 Pages

TI

德州儀器

2A PLASTIC MOLDED THYRISTOR

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：396.47 Kbytes 頁數(shù)：1 Pages

NEC

瑞薩

Triacs sensitive gate

GENERAL DESCRIPTION Passivated thyristors in a plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial domestic lighting, heating and staticand switchin

文件：57.33 Kbytes 頁數(shù)：1 Pages

TGS

Blocking voltage to 600 V

Description Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circu

文件：669.45 Kbytes 頁數(shù)：5 Pages

HAOPIN

好品微電子

Electric blanket,electronic jar,various temperature

文件：129.32 Kbytes 頁數(shù)：1 Pages

ISC

無錫固電

Opto-Electronic Devices(NEPOC)

文件：311.34 Kbytes 頁數(shù)：1 Pages

NEC

瑞薩