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          首頁
                >2N7002PT>規(guī)格書列表
                
          
            
          
                
          
                    
          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO
          
                    
          2N7002PT
          絲?。?a target="_blank" title="Marking" href="/z1/marking.html">Z1；Package：SOT-416；Logic-level compatible
          
General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
■ Logic-level compatible
■ Very fast switching
■ Trench MOSFET technology
■ AEC-Q101 quali
          文件：332.82 Kbytes 頁數(shù)：16 Pages
          恩XP
          恩XP
          

          2N7002PT
          N-Channel Enhancement Mode Field Effect Transistor
          
VOLTAGE 60 Volts CURRENT 0.250 Ampere
FEATURE
* Small surface mounting type. (SOT-23)
* High density cell design for low RDS(ON).
* Suitable for high packing density.
* Rugged and reliable.
* High saturation current capability.
* Voltage controlled small signal switch.
APPLICATION
* Servo
          文件：191.36 Kbytes 頁數(shù)：5 Pages
          CHENMKO
          力勤
          

          2N7002PT
          N-Channel Enhancement Mode Field Effect Transistor - 0.25Amp 60Volt
          
□ Feature
- Small surface mounting type
- High density cell design for low RDS(ON)
- Suitable for high packing density
- Rugged and reliable
- High saturation current capability
- Voltage controlled small signal switch
□ Application
- Servomotor control
- Power MOSFET gate drivers
- Othe
          文件：184.33 Kbytes 頁數(shù)：5 Pages
          SIRECT
          矽萊克半導(dǎo)體
          

          2N7002PT
          絲?。?a target="_blank" title="Marking" href="/z1/marking.html">Z1；Package：SOT416；60 V, 310 mA N-channel Trench MOSFET
          
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
? Logic-level compatible
? Very fast switching
? Trench MOSFET technology
? AEC-Q
          文件：430.71 Kbytes 頁數(shù)：17 Pages
          NEXPERIA
          安世
          

          2N7002PT
          60 V, 310 mA N-channel Trench MOSFET
          N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 
          Nexperia
          安世
          

          
            
          
		
        
          
            
          
                
          詳細(xì)參數(shù)
          
            
          
            
            
            	
          • 型號：
            2N7002PT
          • 功能描述：
            MOSFET MOSFET N-CH SGL 60V 
          • RoHS：
            否 
          • 制造商：
            STMicroelectronics 
          • 晶體管極性：
            N-Channel 
          • 汲極/源極擊穿電壓：
            650 V 
          • 閘/源擊穿電壓：
            25 V 
          • 漏極連續(xù)電流：
            130 A 電阻汲極/源極 
          • RDS（導(dǎo)通）：
            0.014 Ohms 
          • 配置：
            Single 
          • 安裝風(fēng)格：
            Through Hole 
          • 封裝/箱體：
            Max247 
          • 封裝：
            Tube 
          
            
          
        
          
            
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          恩XP
          		

          16+
          		

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          NEXP
          		

          2020+PB
          		

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          NEXPERIA/安世
          		

          25+
          		

          SOT523
          		

          40821
          		

          NEXPERIA/安世全新特價(jià)2N7002PT即刻詢購立享優(yōu)惠#長期有貨
          		
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          NEXP
          		

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          CHENMKO
          		

          24+/25+
          		

          		

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          恩XP
          		

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          恩XP
          		

          25+
          		

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          更多2N7002PT供應(yīng)商
            更新時(shí)間2026-1-19 13:41:00
        
          
        
          
          
          
            
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