絲?。?a target="_blank" title="Marking" href="/702/marking.html">702；Package：SOT-363；60V N-Channel Enhancement Mode MOSFET

DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS This space-efficient device contains two electrically-isolated N-Channel enhancement-mode MOSFETs. It comes in a very small SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium. FEATURES ● Low On-Re

文件：172.69 Kbytes 頁(yè)數(shù)：5 Pages

PANJIT

強(qiáng)茂

Small Signal MOSFET

Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–363

文件：142.59 Kbytes 頁(yè)數(shù)：3 Pages

SECOS

喜可士

SOT-363 Plastic-Encapsulate MOSFETs

Dual N-channel MOSFET FEATURE ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

文件：3.88809 Mbytes 頁(yè)數(shù)：5 Pages

LUGUANG

魯光電子

絲印：K72；Package：SOT-363；Plastic-Encapsulate MOSFETs

Dual N-channel MOSFET FEATURE ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

文件：2.10736 Mbytes 頁(yè)數(shù)：4 Pages

SKTECHNOLGYSHIKE Electronics

時(shí)科廣東時(shí)科微實(shí)業(yè)有限公司

300m Amps, 60 Volts DUAL N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 2N7002DW uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low RDS(ON) * Voltage Controlled Small Sign

文件：306.81 Kbytes 頁(yè)數(shù)：6 Pages

UTC

友順

絲?。?a target="_blank" title="Marking" href="/k72/marking.html">K72；Package：SOT-363；DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET has been designed to minimize the on-state resistance (Rds(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features ? Dual N-Channel MOSFET ? Low On-Resistance ? Low Gate Threshold Voltage ? Lo

文件：66.24 Kbytes 頁(yè)數(shù)：3 Pages

DIODES

美臺(tái)半導(dǎo)體

N-Channel MOSFET

Features High density cell design for Low RDS（on） Voltage controlled small signal switch Rugged and reliable High saturation current capability ESD protected Load Switch for Portable Devices DC/DC Converter Applications

文件：1.169 Mbytes 頁(yè)數(shù)：4 Pages

EVVOSEMI

翊歐

Plastic-Encapsulated Transistors

MOSFET (N-Channel) FEATURES Power dissipation PD : 0.2 W (Tamb=25℃) Collector current ID: 115 mA Collector-base voltage VDS: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：114.22 Kbytes 頁(yè)數(shù)：1 Pages

TEL

115 mAmps,60 Volts

N–Channel SOT-363 ? We declare that the material of product are Halogen Free and compliance with RoHS requirements. ? ESD Protected:1000V ? Pb-Free package is available RoHS product for packing code suffix G Halogen free product for packing code suffix H

文件：314.52 Kbytes 頁(yè)數(shù)：4 Pages

WILLAS

威倫電子

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features ? Dual N-Channel MOSFET ? Low On-Resistance ? Low Gate Threshold Voltage ? Low Input Capacitance ? Fast Switching Speed ? Low Input/Output Leakage ? Ultra-Small Surface Mount Package ? Available in Lead Free/RoHS Compliant Version (Note 2)

文件：123.61 Kbytes 頁(yè)數(shù)：4 Pages

DIODES

美臺(tái)半導(dǎo)體