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          首頁(yè) >2N700>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          2N7002ESPT

          N-Channel Enhancement Mode Field Effect Transistor

          VOLTAGE 60 Volts CURRENT 0.300 Ampere CONSTRUCTION * N-Channel Enhancement with ESD protection in input MARKING * PK1 FEATURE * Small surface mounting type. (SOT-23) * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged and reliable. * High saturation

          文件:532.57 Kbytes 頁(yè)數(shù):5 Pages

          CHENMKO

          力勤

          2N7002E-T1-E3

          N-Channel 60 V (D-S) MOSFET

          FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? Low On-Resistance: 3 ? ? Low Threshold: 2 V (typ.) ? Low Input Capacitance: 25 pF ? Fast Switching Speed: 7.5 ns ? Low Input and Output Leakage ? Compliant to RoHS Directive 2002/95/EC BENEFITS ? Low Offset Voltage ? Low-Vo

          文件:183.33 Kbytes 頁(yè)數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          2N7002ET1G

          Small Signal MOSFET 60 V, 310 mA, Single, N??hannel, SOT??3

          Features ? Low RDS(on) ? Small Footprint Surface Mount Package ? Trench Technology ? S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoH

          文件:104.79 Kbytes 頁(yè)數(shù):5 Pages

          ONSEMI

          安森美半導(dǎo)體

          2N7002ET1G

          Small Signal MOSFET Single N??hannel, 60 V, 310 mA, 2.5 Ohm

          Features ? Low RDS(on) ? Small Footprint Surface Mount Package ? Trench Technology ? S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Comp

          文件:205.12 Kbytes 頁(yè)數(shù):6 Pages

          ONSEMI

          安森美半導(dǎo)體

          2N7002E-T1-GE3

          N-Channel 60 V (D-S) MOSFET

          FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? Low On-Resistance: 3 ? ? Low Threshold: 2 V (typ.) ? Low Input Capacitance: 25 pF ? Fast Switching Speed: 7.5 ns ? Low Input and Output Leakage ? Compliant to RoHS Directive 2002/95/EC BENEFITS ? Low Offset Voltage ? Low-Vo

          文件:194.4 Kbytes 頁(yè)數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          2N7002ET7G

          Small Signal MOSFET Single N??hannel, 60 V, 310 mA, 2.5 Ohm

          Features ? Low RDS(on) ? Small Footprint Surface Mount Package ? Trench Technology ? S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Comp

          文件:205.12 Kbytes 頁(yè)數(shù):6 Pages

          ONSEMI

          安森美半導(dǎo)體

          2N7002F

          絲?。?a target="_blank" title="Marking" href="/-7f/marking.html">-7F;Package:SOT-23;TrenchMOS Logic Level FET

          General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. Features ■ Logic level threshold compatible ■ Very fast switching ■ Surface-mounted package ■ TrenchMOS technology Applications ■ Logic level translator ■ High-

          文件:126.94 Kbytes 頁(yè)數(shù):11 Pages

          PHI

          PHI

          PHI

          2N7002-G

          N-Channel Enhancement-Mode Vertical DMOS FET

          General Description The Supertex 2N7002 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the hi

          文件:444.49 Kbytes 頁(yè)數(shù):14 Pages

          MICROCHIP

          微芯科技

          2N7002-G

          MOSFET

          MOSFET (N-Channel) RoHS Device Features Power dissipation : 0.35W

          文件:183.7 Kbytes 頁(yè)數(shù):4 Pages

          COMCHIP

          典琦

          2N7002H

          絲?。?a target="_blank" title="Marking" href="/m9/marking.html">M9;Package:SOT23;60 V, N-channel Trench MOSFET

          1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Logic-level compatible ? Very fast switching ? Trench MOSFET technology ? AEC-Q101 quali

          文件:283.29 Kbytes 頁(yè)數(shù):15 Pages

          NEXPERIA

          安世

          技術(shù)參數(shù)

          • Pb-free:

            Pb

          • Halide free:

            H

          • Status:

            Active

          • Channel Polarity:

            N-Channel

          • Configuration:

            Single

          • V(BR)DSS Min (V):

            60

          • VGS Max (V):

            ±20

          • VGS(th) Max (V):

            2.5

          • ID Max (A):

            0.115

          • PD Max (W):

            0.2

          • RDS(on) Max @ VGS = 4.5 V(mΩ):

            7500

          • RDS(on) Max @ VGS = 10 V(mΩ):

            7500

          • Qg Typ @ VGS = 10 V (nC):

            1

          • Ciss Typ (pF):

            20

          • Package Type:

            SOT-23-3

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          恩XP
          15+
          SOT23
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          7589
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          更多2N700供應(yīng)商 更新時(shí)間2021-9-16 14:01:00
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