| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
2N6755 | HEXFET TRANSISTORS HEXFET TRANSISTORS JEDEC REGISTERED N-CHANNEL POWER MOSFETs 100 Volts, 0.18 Ohm HEXFET 文件:409.95 Kbytes 頁數:3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體公司 | NJSEMI | |
2N6755 | N-Channel Power MOSFETs, 14 A, 60 A/100 V Description These devices are n-channel, enchancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. 文件:136.63 Kbytes 頁數:5 Pages | FAIRCHILD 仙童半導體 | FAIRCHILD | |
2N6755 | VGS Rated at ?20V 文件:47.2 Kbytes 頁數:2 Pages | ISC 無錫固電 | ISC | |
2N6755 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. | GESS | GESS | |
2N6755 | Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) TO-3 | NJS | NJS | |
2N6755 | N-Channel Power MOSFETs, 14 A, 60 A/100 V | ONSEMI 安森美半導體 | ONSEMI |
技術參數
- Minimum Operating Temperature:
-55°C
- Maximum Power Dissipation:
75000mW
- Maximum Operating Temperature:
150°C
- Maximum Gate Source Voltage:
±20V
- Maximum Drain Source Voltage:
100V
- Maximum Continuous Drain Current:
14A
- Configuration:
Single
- Channel Type:
N
- Channel Mode:
Enhancement
- Category:
Power MOSFET
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
MOT |
24+ |
TO-3 |
10000 |
詢價 | |||
IR/MOT |
24+ |
TO-3 |
850 |
原裝現貨假一罰十 |
詢價 | ||
IR/MOT |
專業(yè)鐵帽 |
TO-3 |
850 |
原裝鐵帽專營,代理渠道量大可訂貨 |
詢價 | ||
IR/MOT |
專業(yè)鐵帽 |
TO-3 |
67500 |
鐵帽原裝主營-可開原型號增稅票 |
詢價 | ||
2N6755 |
25+ |
100 |
100 |
詢價 | |||
IR |
24+ |
TO-03 |
200 |
進口原裝正品優(yōu)勢供應 |
詢價 | ||
IR |
24+ |
TO-03 |
66800 |
原廠授權一級代理,專注汽車、醫(yī)療、工業(yè)、新能源! |
詢價 | ||
TI |
TSSOP30 |
6850 |
萊克訊每片來自原廠原盒原包裝假一罰十價優(yōu) |
詢價 | |||
IR |
23+ |
TO3 |
50000 |
全新原裝正品現貨,支持訂貨 |
詢價 | ||
IR |
23+ |
TO-3 |
50000 |
全新原裝正品現貨,支持訂貨 |
詢價 |
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