90V, 4 Ohm, N-Channel, Enhancement-Mode, Vertical DMOS FET

2N6661 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature co Free from secondary breakdown \nLow power drive requirement \nEase of paralleling \nLow CISS and fast switching speeds \nExcellent thermal stability \nIntegral source-drain diode \nHigh input impedance and high gain;

Microchip

微芯科技

MOSFETs and JFETs

TT Electronics

N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION This enhancement-mode (normally-off) vertical DMOS FET is ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. High Reliability Screening options are a

文件：92.11 Kbytes 頁數(shù)：2 Pages

SEME-LAB

DUAL N??HANNEL ENHANCEMENT MODE

DESCRIPTION These Dual enhancement-mode (normally-off) vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. High Reliability Screening optio

文件：41.87 Kbytes 頁數(shù)：2 Pages

SEME-LAB

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：82.73 Kbytes 頁數(shù)：3 Pages

SEME-LAB

N-Channel 90 V (D-S) MOSFET

文件：130.4 Kbytes 頁數(shù)：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 90 V (D-S) MOSFET

文件：130.4 Kbytes 頁數(shù)：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 90 V (D-S) MOSFET

文件：130.4 Kbytes 頁數(shù)：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 90 V (D-S) MOSFET

文件：130.4 Kbytes 頁數(shù)：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：730.33 Kbytes 頁數(shù)：3 Pages

SEME-LAB