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          首頁 >2N649>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          2N6499

          HIGH VOLTAGE NPN SILICON POWER TRANSISTORS

          HIGH VOLTAGE NPN SILICON POWER TRANSISTORS ... designed for high voltage inverters,switching regulators and line operated amplifier applications. FEATURES: ? Collector-Emitter Sustaining Voltage- VCEO(SUS)= 250V(Min)- 2N6497 = 300V(Min)- 2N6498 = 350V(Min)- 2N6499 ? DC Current Gain- hFE= 10-75

          文件:185.48 Kbytes 頁數(shù):4 Pages

          BOCA

          博卡

          2N6499

          SILICON NPN POWER TRANSISTORS

          DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6497, 2N6498, and 2N6499 are silicon NPN power transistors designed for high voltage amplifier applications.

          文件:890.67 Kbytes 頁數(shù):4 Pages

          CENTRAL

          2N6499

          POWER TRANSISTORS(5A,80W)

          HIGH VOLTAGE NPN SILICON POWER TRANSISTORS ... designed for high voltage inverters,switching regulators and line operated amplifier applications. FEATURES: ? Collector-Emitter Sustaining Voltage- VCEO(SUS)= 250V(Min)- 2N6497 = 300V(Min)- 2N6498 = 350V(Min)- 2N6499 ? DC Current Gain- hFE= 10-

          文件:179 Kbytes 頁數(shù):4 Pages

          MOSPEC

          統(tǒng)懋

          2N6499

          isc Silicon NPN Power Transistors

          DESCRIPTION ? Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min)- 2N6497 = 300V(Min)- 2N6498 = 350V(Min)- 2N6499 ? DC Current Gain- : hFE= 10-75@IC= 2.5A APPLICATIONS ? Designed for high voltage inverters, switching regulators and line operated amplifier applications.

          文件:199 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          2N6499

          SI NPN POWER BJT

          HIGH VOLTAGE NPN SILICON POWER TRANSISTORS ... designed for high voltage inverters,switching regulators and line operated amplifier applications. FEATURES: ? Collector-Emitter Sustaining Voltage- VCEO(SUS)= 250V(Min)- 2N6497 = 300V(Min)- 2N6498 = 350V(Min)- 2N6499 ? DC Current Gain- hFE= 10-75

          文件:129.61 Kbytes 頁數(shù):1 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導(dǎo)體新澤西半導(dǎo)體公司

          2N6499

          HIGH VOLTAGE NPN SILICON POWER TRANSISTORS

          HIGH VOLTAGE NPN SILICON POWER TRANSISTORS ... designed for high voltage inverters,switching regulators and line operated amplifier applications. FEATURES: ? Collector-Emitter Sustaining Voltage- VCEO(SUS)= 250V(Min)- 2N6497 = 300V(Min)- 2N6498 = 350V(Min)- 2N6499 ? DC Current Gain- hFE= 10-75

          文件:94.23 Kbytes 頁數(shù):2 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導(dǎo)體新澤西半導(dǎo)體公司

          2N6490

          Silicon PNP Power Transistors

          文件:114.98 Kbytes 頁數(shù):3 Pages

          JMNIC

          錦美電子

          2N6490

          Silicon PNP Power Transistors

          文件:161.55 Kbytes 頁數(shù):3 Pages

          JMNIC

          錦美電子

          2N6490

          Silicon PNP Power Transistors

          文件:114.98 Kbytes 頁數(shù):3 Pages

          JMNIC

          錦美電子

          2N6490

          COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

          文件:154.41 Kbytes 頁數(shù):2 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導(dǎo)體新澤西半導(dǎo)體公司

          晶體管資料

          • 型號:

            2N649

          • 別名:

            三極管、晶體管、晶體三極管

          • 生產(chǎn)廠家:

          • 制作材料:

            Ge-NPN

          • 性質(zhì):

            低頻或音頻放大 (LF)_開關(guān)管 (S)

          • 封裝形式:

            直插封裝

          • 極限工作電壓:

            20V

          • 最大電流允許值:

            0.05A

          • 最大工作頻率:

            <1MHZ或未知

          • 引腳數(shù):

            3

          • 可代換的型號:

            AC127,ASY28,ASY29,ASY73,ASY74,ASY75,2N1302,

          • 最大耗散功率:

            0.1W

          • 放大倍數(shù):

          • 圖片代號:

            C-18

          • vtest:

            20

          • htest:

            999900

          • atest:

            0.05

          • wtest:

            0.1

          技術(shù)參數(shù)

          • Pb-free:

            Pb

          • Status:

            Active

          • Polarity:

            PNP

          • Type:

            General Purpose

          • VCE(sat) Max (V):

            1.3

          • IC Cont. (A):

            15

          • VCEO Min (V):

            60

          • VCBO (V):

            70

          • VEBO (V):

            5

          • VBE(on) (V):

            1.3

          • hFE Min:

            20

          • hFE Max:

            150

          • fT Min (MHz):

            5

          • PTM Max (W):

            75

          • Package Type:

            TO-220-3

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          更多2N649供應(yīng)商 更新時(shí)間2026-1-20 8:01:00
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