| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
DARLINGTON NPN SILICON POWER TRANSISTORS Plastic Medium-Power Silicon Transistors These devices are designed for general-purpose amplifier and low-speed switching applications. Features ? High DC Current Gain - hFE = 2500 (Typ) @ IC = 4.0 Adc ? Collector-Emitter Sustaining Voltage - @ 100 mAdc VCEO(sus) = 60 Vdc (Min) - 2N6387 文件：164.24 Kbytes 頁數(shù)：6 Pages | ONSEMI 安森美半導體 | ONSEMI | ||
NPN PLASTIC MEDIUM DARLINGTON POWER TRANSISTORS Designed for General Purpose Amplifier and Low Speed Switching Applications 文件：92.64 Kbytes 頁數(shù)：4 Pages | CDIL | CDIL | ||
NPN SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites. 文件：71.78 Kbytes 頁數(shù)：1 Pages | CENTRAL | CENTRAL | ||
POWER TRANSISTORS(65W) 8 AND 10 AMPERE DARLINGTON POWER TRANSISTORS NPN SILICON 40-80 VOLTS 65 WATTS 文件：160.99 Kbytes 頁數(shù)：3 Pages | MOSPEC 統(tǒng)懋 | MOSPEC | ||
Power Transistors Power Transistors 文件：347.98 Kbytes 頁數(shù)：8 Pages | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | ||
Darlington Power Transistor [multicomp] Darlington silicon power transistors are designed for general-purpose amplifier and low speed switching applications. Features: ? Collector-Emitter Sustaining Voltage VCEO(sus) = 80V (Minimum). ? Collector-Emitter Saturation Voltage VCE(sat) = 2.0V (Maximum) at IC = 文件：207.55 Kbytes 頁數(shù)：6 Pages | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2N6666/6667/6668 ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·Designed for general-purpose amplifier and low speed switching applications 文件：134.89 Kbytes 頁數(shù)：3 Pages | ISC 無錫固電 | ISC | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2N6666/6667/6668 ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·Designed for general-purpose amplifier and low speed switching applications 文件：163.85 Kbytes 頁數(shù)：3 Pages | JMNIC 錦美電子 | JMNIC | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2N6666/6667/6668 ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·Designed for general-purpose amplifier and low speed switching applications 文件：111.88 Kbytes 頁數(shù)：3 Pages | JMNIC 錦美電子 | JMNIC | ||
PLASTIC MEDIUM-POWER SILICON TRANSISTORS DARLINGTON 8 AND 10 AMPERE NPN SILICON POWER TRANSISTORS 40-60-80 VOLTS 65 WATTS 文件：259.149 Kbytes 頁數(shù)：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體公司 | NJSEMI |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產廠家：
- 制作材料：
Si-N+Darl
- 性質：
低頻或音頻放大 （LF）_開關管 （S）_功率放大 （L
- 封裝形式：
貼片封裝
- 極限工作電壓：
40V
- 最大電流允許值：
10A
- 最大工作頻率：
>20MHZ
- 引腳數(shù)：
2
- 可代換的型號：
BDV67,BDW83,BDX65,BDX83,BDX85,MJ3000,TIP140,
- 最大耗散功率：
100W
- 放大倍數(shù)：
- 圖片代號：
E-44
- vtest：
40
- htest：
20000100
- atest：
10
- wtest：
100
產品屬性
- 產品編號：
2N6383
- 制造商：
Microchip Technology
- 類別：
分立半導體產品 > 晶體管 - 雙極性晶體管（BJT）- 單個
- 包裝：
散裝
- 描述：
NPN TRANSISTOR
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ONSEMI/安森美 |
25+ |
TO-3 |
45000 |
ONSEMI/安森美全新現(xiàn)貨2N6383即刻詢購立享優(yōu)惠#長期有排單訂 |
詢價 | ||
24+ |
TO-3 |
10000 |
全新 |
詢價 | |||
MOTOROLA |
24+ |
TO-3 |
1200 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
CENTRAL |
新 |
300 |
全新原裝 貨期兩周 |
詢價 | |||
MOTOROLA |
專業(yè)鐵帽 |
TO-3 |
1200 |
原裝鐵帽專營,代理渠道量大可訂貨 |
詢價 | ||
Microsemi |
1942+ |
N/A |
908 |
加我qq或微信，了解更多詳細信息,體驗一站式購物 |
詢價 | ||
MICROSEMI |
25+ |
SMD |
26 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
2N6383 |
25+ |
20 |
20 |
詢價 | |||
MOTOROLA/摩托羅拉 |
23+ |
TO-3 |
5000 |
原廠授權代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳 |
詢價 | ||
Microchip |
2022+ |
原廠原包裝 |
8600 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 |
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