| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
2N6313 | POWER TRANSISTORS(5A,75W) COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0. 文件：189.54 Kbytes 頁數(shù)：4 Pages | MOSPEC 統(tǒng)懋 | MOSPEC | |
2N6313 | Silicon PNP Power Transistors DESCRIPTION ? With TO-66 package ? Low collector saturation voltage ? Low leakage current APPLICATIONS ? Designed for general-purpose power amplifier and switching applications 文件：132 Kbytes 頁數(shù)：3 Pages | ISC 無錫固電 | ISC | |
2N6313 | COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex = 文件：95.36 Kbytes 頁數(shù)：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | |
2N6313 | COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex = 文件：95.36 Kbytes 頁數(shù)：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | |
2N6313 | Silicon PNP Power Transistors DESCRIPTION ? With TO-66 package ? Low collector saturation voltage ? Low leakage current APPLICATIONS ? Designed for general-purpose power amplifier and switching applications 文件：116.18 Kbytes 頁數(shù)：3 Pages | SAVANTIC | SAVANTIC | |
2N6313 | COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0. 文件：196.45 Kbytes 頁數(shù)：4 Pages | BOCA 博卡 | BOCA | |
2N6313 | Power Transistors Power Transistors TO-66 Case 文件：51.32 Kbytes 頁數(shù)：1 Pages | CENTRAL | CENTRAL | |
2N6313 | Bipolar PNP Device in a Hermetically sealed TO66 Bipolar PNP Device in a Hermetically sealed TO66 Metal Package. Bipolar PNP Device. VCEO = 60V IC = 5A 文件：15.18 Kbytes 頁數(shù)：1 Pages | SEME-LAB | SEME-LAB | |
2N6313 | COMPLEMENTARY SILICON POWER TRANSISTORS 文件：344.67 Kbytes 頁數(shù)：2 Pages | CENTRAL | CENTRAL | |
2N6313 | Silicon PNP Power Transistors 文件：117.76 Kbytes 頁數(shù)：3 Pages | SAVANTIC | SAVANTIC |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-PNP
- 性質(zhì)：
低頻或音頻放大 （LF）_開關(guān)管 （S）_功率放大 （L
- 封裝形式：
直插封裝
- 極限工作電壓：
60V
- 最大電流允許值：
5A
- 最大工作頻率：
>4MHZ
- 引腳數(shù)：
2
- 可代換的型號：
BD244A,BD540A,BD598,BD608,BD950,2N5955,2SB550,3CD81C,
- 最大耗散功率：
75W
- 放大倍數(shù)：
- 圖片代號：
E-8
- vtest：
60
- htest：
4000100
- atest：
5
- wtest：
75
詳細(xì)參數(shù)
- 型號：
2N6313
- 制造商：
ISC
- 制造商全稱：
Inchange Semiconductor Company Limited
- 功能描述：
Silicon PNP Power Transistors
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
24+ |
TO-66 |
10000 |
全新 |
詢價 | |||
MOT/MSC |
24+ |
TO-66 |
1000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
MOTOROLA/摩托羅拉 |
20+ |
TO-66 |
67500 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
ASI |
24+ |
TO-02 |
66800 |
原廠授權(quán)一級代理,專注汽車、醫(yī)療、工業(yè)、新能源！ |
詢價 | ||
TI |
QFP |
6850 |
萊克訊每片來自原廠原盒原包裝假一罰十價優(yōu) |
詢價 | |||
25+ |
長期備有現(xiàn)貨 |
500000 |
行業(yè)低價,代理渠道 |
詢價 | |||
MOTOROLA |
專業(yè)鐵帽 |
TO-66 |
1200 |
原裝鐵帽專營,代理渠道量大可訂貨 |
詢價 | ||
2000 |
25 |
詢價 | |||||
MOT |
24+ |
CAN |
2257 |
進(jìn)口原裝正品優(yōu)勢供應(yīng) |
詢價 | ||
MOT |
24+ |
CAN |
18700 |
詢價 |
