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          首頁 >2N63>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          2N6359

          Silicon NPN Power Transistors

          DESCRIPTION ? With TO-3 package ? Low collector saturation voltage ? High DC current gain ? Excellent safe operating area APPLICATIONS ? Designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters.

          文件:130.039 Kbytes 頁數(shù):3 Pages

          ISC

          無錫固電

          2N6359

          Silicon NPN Power Transistors

          DESCRIPTION ? With TO-3 package ? Low collector saturation voltage ? High DC current gain ? Excellent safe operating area APPLICATIONS ? Designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters.

          文件:154.06 Kbytes 頁數(shù):3 Pages

          JMNIC

          錦美電子

          2N6359

          Silicon NPN Power Transistors

          DESCRIPTION ? With TO-3 package ? Low collector saturation voltage ? High DC current gain ? Excellent safe operating area APPLICATIONS ? Designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters.

          文件:111.37 Kbytes 頁數(shù):3 Pages

          SAVANTIC

          2N6360

          Silicon NPN Power Transistors

          DESCRIPTION ? With TO-3 package ? Low collector saturation voltage ? High DC current gain ? Excellent safe operating area APPLICATIONS ? Designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters.

          文件:110.76 Kbytes 頁數(shù):3 Pages

          SAVANTIC

          2N6360

          Silicon NPN Power Transistor

          DESCRIPTION ? Excellent Safe Operating Area ? High DC Current Gain- : hFE=15-60(Min)@IC = 6A ? Low Saturation Voltage- : VCE(sat)= 1.4V(Max)@ IC = 6A APPLICATIONS ? Designed for high power applications and switching circuits such as relay or solenoid drivers, DC-DC converters or Inverters.

          文件:131.039 Kbytes 頁數(shù):2 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導(dǎo)體新澤西半導(dǎo)體公司

          2N6360

          Silicon NPN Power Transistors

          DESCRIPTION ? With TO-3 package ? Low collector saturation voltage ? High DC current gain ? Excellent safe operating area APPLICATIONS ? Designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters.

          文件:154.28 Kbytes 頁數(shù):3 Pages

          JMNIC

          錦美電子

          2N6360

          Silicon NPN Power Transistors

          DESCRIPTION ? With TO-3 package ? Low collector saturation voltage ? High DC current gain ? Excellent safe operating area APPLICATIONS ? Designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters.

          文件:130.13 Kbytes 頁數(shù):3 Pages

          ISC

          無錫固電

          2N637

          POWER CONVERTER TRANSISTORS

          BENDIX GERMANIUM PNP POWER CONVERTER TRANSISTORS The Bendix 2N637, 2N637A and 2N637B are a series of hgih gain transistors especially designed as high current switching devices for DC-DC converter and DC-AC inverter circuits.

          文件:80.29 Kbytes 頁數(shù):2 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導(dǎo)體新澤西半導(dǎo)體公司

          2N6370

          NPN SILICON RF POWER TRANSISTOR

          NPN SILICON RF POWER TRANSISTOR

          文件:143.13 Kbytes 頁數(shù):1 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導(dǎo)體新澤西半導(dǎo)體公司

          2N6371

          Silicon NPN Power Transistor

          DESCRIPTION ? Excellent Safe Operating Area ? DC Current Gain- : hFE=15-60(Min)@IC = 8A ? Low Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC = 8A APPLICATIONS ? Series and shunt regulators ? High-fidelity amplifiers ? Power-switching circuits

          文件:134.78 Kbytes 頁數(shù):2 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導(dǎo)體新澤西半導(dǎo)體公司

          晶體管資料

          • 型號(hào):

            2N6352

          • 別名:

            三極管、晶體管、晶體三極管

          • 生產(chǎn)廠家:

          • 制作材料:

            Si-N+Darl

          • 性質(zhì):

            開關(guān)管 (S)

          • 封裝形式:

            直插封裝

          • 極限工作電壓:

            80V

          • 最大電流允許值:

            5A

          • 最大工作頻率:

            <1MHZ或未知

          • 引腳數(shù):

            2

          • 可代換的型號(hào):

          • 最大耗散功率:

            25W

          • 放大倍數(shù):

            β>2000

          • 圖片代號(hào):

            E-43

          • vtest:

            80

          • htest:

            999900

          • atest:

            5

          • wtest:

            25

          產(chǎn)品屬性

          • 產(chǎn)品編號(hào):

            2N6352

          • 制造商:

            Microchip Technology

          • 類別:

            分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極性晶體管(BJT)- 單個(gè)

          • 包裝:

            散裝

          • 描述:

            NPN TRANSISTOR

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          25+
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          就找我吧!--邀您體驗(yàn)愉快問購元件!
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          全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
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          更多2N63供應(yīng)商 更新時(shí)間2026-1-19 16:30:00
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