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          首頁(yè) >2N629>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          2N6292

          PLASTIC POWER TRANSISTORS

          PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications

          文件:100.9 Kbytes 頁(yè)數(shù):4 Pages

          CDIL

          2N6292

          NPN SILICON TRANSISTOR

          DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites.

          文件:71.78 Kbytes 頁(yè)數(shù):1 Pages

          CENTRAL

          2N6292

          COMPLEMENTARY SILICON POWER TRANSISTORS

          DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6107, 2N6288 series types are complementary silicon power transistors, manufactured by the epitaxial base process, designed for general purpose power amplifier and switching applications.

          文件:178.71 Kbytes 頁(yè)數(shù):3 Pages

          CENTRAL

          2N6292

          POWER TRANSISTORS(7A,40W)

          2N6107,2N6109,2N6111 -- >PNP 2N6288,2N6290,2N6292 --> NPN 7A 30 - 70 Volts 40 Watts

          文件:171.37 Kbytes 頁(yè)數(shù):4 Pages

          MOSPEC

          統(tǒng)懋

          2N6292

          Silicon NPN Power Transistors

          DESCRIPTION ? With TO-220 package ? Complement to PNP type: 2N6107; 2N6109 ;2N6111 APPLICATIONS ? Power amplifier and switching circuits applications

          文件:136.19 Kbytes 頁(yè)數(shù):3 Pages

          ISC

          無(wú)錫固電

          2N6292

          POWER TRANSISTORS COMPLEMENTARY SILICON

          Complementary Silicon Plastic Power Transistors These devices are designed for use in general?purpose amplifier and switching applications. Features ? DC Current Gain Specified to 7.0 Amperes hFE = 30?150 @ IC = 3.0 Adc ? 2N6111, 2N6288 = 2.3 (Min) @ IC = 7.0 Adc ?

          文件:149.27 Kbytes 頁(yè)數(shù):4 Pages

          ONSEMI

          安森美半導(dǎo)體

          2N6292NPN

          PLASTIC POWER TRANSISTORS

          PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications

          文件:100.9 Kbytes 頁(yè)數(shù):4 Pages

          CDIL

          2N6293

          MAXIMUM RATINGS, ABSOLUTE-MAXIMUM VALUOS

          Epitaxial-Base, Silicon NPN and PNP VERSAWATT Transistors

          文件:193.33 Kbytes 頁(yè)數(shù):2 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導(dǎo)體新澤西半導(dǎo)體公司

          2N6293

          EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS

          Epitaxial-Base, Silicon NPN and PNP VERSAWATT Transistors General-Purpose Medium-Power Types for Switching and Amplifier Applications

          文件:101.31 Kbytes 頁(yè)數(shù):3 Pages

          BOCA

          博卡

          2N6294

          DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

          2N6294,2N6295 --> NPN 2N6296, 2N6297 --> PNP

          文件:205.28 Kbytes 頁(yè)數(shù):2 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導(dǎo)體新澤西半導(dǎo)體公司

          晶體管資料

          • 型號(hào):

            2N629

          • 別名:

            三極管、晶體管、晶體三極管

          • 生產(chǎn)廠家:

          • 制作材料:

            Ge-PNP

          • 性質(zhì):

            低頻或音頻放大 (LF)_開(kāi)關(guān)管 (S)_功率放大 (L

          • 封裝形式:

            直插封裝

          • 極限工作電壓:

            80V

          • 最大電流允許值:

            10A

          • 最大工作頻率:

            <1MHZ或未知

          • 引腳數(shù):

            2

          • 可代換的型號(hào):

            AL100,AL101,AUY21,2N1550,2N1554,2N1558,2N2292,2N2293,3AD57B,

          • 最大耗散功率:

            94W

          • 放大倍數(shù):

          • 圖片代號(hào):

            E-44

          • vtest:

            80

          • htest:

            999900

          • atest:

            10

          • wtest:

            94

          技術(shù)參數(shù)

          • Maximum Transition Frequency:

            4(Min)MHz

          • Maximum Power Dissipation:

            40000mW

          • Maximum Operating Temperature:

            150°C

          • Maximum Emitter Base Voltage:

            5V

          • Maximum DC Collector Current:

            7A

          • Maximum Collector Emitter Voltage:

            30V

          • Maximum Collector Emitter Saturation Voltage:

            3.5@3A@7AV

          • Maximum Collector Base Voltage:

            40V

          • Material:

            Si

          • Configuration:

            Single

          • Category:

            Bipolar Power

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          更多2N629供應(yīng)商 更新時(shí)間2026-1-19 16:30:00
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