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          首頁(yè) >2N627>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          2N6274

          PNP POWER SILICON TRANSISTOR

          NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/514

          文件:64.39 Kbytes 頁(yè)數(shù):2 Pages

          MICROSEMI

          美高森美

          2N6274

          POWER TRANSISTORS NPN SILICON

          High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. ? High Collector Emitter Sustaining — VCEO(sus) = 100 Vdc (Min) — 2N6274 = 120 Vdc (Min) — 2N62

          文件:169.38 Kbytes 頁(yè)數(shù):6 Pages

          ONSEMI

          安森美半導(dǎo)體

          2N6274

          isc Silicon NPN Power Transistor

          DESCRIPTION ? High Switching Speed ? High DC Current Gain- : hFE= 30-120@ IC= 20A ? Low Collector Saturation Voltage- : VCE(sat)=1.0V(Min.)@ IC= 20A ? Complement to Type 2N6377 APPLICATIONS ? Designed for use in industrial-military power amplifier and switching circuit ap

          文件:263.94 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          2N6275

          HIGH-POWER NPN SILICON TRANSISTORS

          NPN POWER TRANSISTORS 50 AMP SWITCHING ? 25 W. Continuous Power ? VCEO(sus) to 150 V.

          文件:248.59 Kbytes 頁(yè)數(shù):2 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導(dǎo)體新澤西半導(dǎo)體公司

          2N6275

          NPN POWER TRANSISTORS

          NPN POWER TRANSISTORS 50 AMP SWITCHING ? 25 W. Continuous Power ? VCEO(sus) to 150 V.

          文件:191.4 Kbytes 頁(yè)數(shù):1 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導(dǎo)體新澤西半導(dǎo)體公司

          2N6275

          POWER TRANSISTORS NPN SILICON

          High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. ? High Collector Emitter Sustaining — VCEO(sus) = 100 Vdc (Min) — 2N6274 = 120 Vdc (Min) — 2N62

          文件:169.38 Kbytes 頁(yè)數(shù):6 Pages

          ONSEMI

          安森美半導(dǎo)體

          2N6275

          isc Silicon NPN Power Transistor

          DESCRIPTION ? High Switching Speed ? High DC Current Gain- : hFE= 30-120@ IC= 20A ? Low Collector Saturation Voltage- : VCE(sat)=1.0V(Min.)@ IC= 20A ? Complement to Type 2N6378 APPLICATIONS ? Designed for use in industrial-military power amplifier and switching circuit applications.

          文件:263.6 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          2N6276

          NPN POWER TRANSISTORS

          NPN POWER TRANSISTORS 50 AMP SWITCHING ? 25 W. Continuous Power ? VCEO(sus) to 150 V.

          文件:191.4 Kbytes 頁(yè)數(shù):1 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導(dǎo)體新澤西半導(dǎo)體公司

          2N6277

          HIGH-POWER NPN SILICON TRANSISTORS

          NPN POWER TRANSISTORS 50 AMP SWITCHING ? 25 W. Continuous Power ? VCEO(sus) to 150 V.

          文件:248.59 Kbytes 頁(yè)數(shù):2 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導(dǎo)體新澤西半導(dǎo)體公司

          2N6277

          NPN POWER TRANSISTORS

          NPN POWER TRANSISTORS 50 AMP SWITCHING ? 25 W. Continuous Power ? VCEO(sus) to 150 V.

          文件:191.4 Kbytes 頁(yè)數(shù):1 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導(dǎo)體新澤西半導(dǎo)體公司

          晶體管資料

          • 型號(hào):

            2N627

          • 別名:

            三極管、晶體管、晶體三極管

          • 生產(chǎn)廠家:

          • 制作材料:

            Ge-PNP

          • 性質(zhì):

            低頻或音頻放大 (LF)_開(kāi)關(guān)管 (S)_功率放大 (L

          • 封裝形式:

            直插封裝

          • 極限工作電壓:

            40V

          • 最大電流允許值:

            10A

          • 最大工作頻率:

            <1MHZ或未知

          • 引腳數(shù):

            2

          • 可代換的型號(hào):

            AL100,AL101,AUY21,2N1549,2N1553,2N1557,2N2288,2N2289,2N2290,2N2291,2N2292,2N2293,3AD57A,

          • 最大耗散功率:

            94W

          • 放大倍數(shù):

          • 圖片代號(hào):

            E-44

          • vtest:

            40

          • htest:

            999900

          • atest:

            10

          • wtest:

            94

          技術(shù)參數(shù)

          • Maximum Transition Frequency:

            4(Min)MHz

          • Maximum Power Dissipation:

            40000mW

          • Maximum Operating Temperature:

            150°C

          • Maximum Emitter Base Voltage:

            5V

          • Maximum DC Collector Current:

            7A

          • Maximum Collector Emitter Voltage:

            30V

          • Maximum Collector Emitter Saturation Voltage:

            3.5@3A@7AV

          • Maximum Collector Base Voltage:

            40V

          • Material:

            Si

          • Configuration:

            Single

          • Category:

            Bipolar Power

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          更多2N627供應(yīng)商 更新時(shí)間2026-1-20 16:30:00
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