| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
2N6052 | Transistor, Bipolar, TO-3, PNP, 12 A, 100 V, 150 W Description : A silicon PNP Darlington transistors in a TO-3 type case designed for general-purpose amplifier and low-frequency applications Features - High DC Current Gain - Collector-Emitter Sustaining Voltage : Vced(sus) = 100V Min @ 100mA -Monolithic Construction with Buit-in Base-Emitte 文件:174.77 Kbytes 頁數(shù):1 Pages | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | |
2N6052 | isc Silicon PNP Darlingtion Power Transistor 文件:146.53 Kbytes 頁數(shù):2 Pages | ISC 無錫固電 | ISC | |
2N6052 | Bipolar PNP Device in a Hermetically sealed TO3 文件:16.329 Kbytes 頁數(shù):1 Pages | SEME-LAB | SEME-LAB | |
2N6052 | Darlington Complementary Silicon Power Transistors 文件:130.66 Kbytes 頁數(shù):8 Pages | ONSEMI 安森美半導體 | ONSEMI | |
2N6052 | Darlington Complementary Silicon Power Transistors 文件:149.78 Kbytes 頁數(shù):7 Pages | ONSEMI 安森美半導體 | ONSEMI | |
2N6052 | POWER COMPLEMENTARY SILICON TRANSISTORS 文件:80.97 Kbytes 頁數(shù):3 Pages | COMSET | COMSET | |
2N6052 | Darlington PNP Silicon Power -80V to -100V, -12A This specification covers the performance requirements for PNP, Darlington, silicon, power, 2N6051 and 2N6052 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each encapsulated device as specified in MIL-PRF-19500/501. The device package outlines are as follows | Microchip 微芯科技 | Microchip | |
2N6052 | 12 A, 100 V PNP Darlington Bipolar Power Transistor This Bipolar Power PNP Darlington Transistor is designed for general-purpose amplifier and low frequency switching applications. ? High DC Current GainhFE = 3500 (Typ) @ IC = 5.0 Adc\n? Collector-Emitter Sustaining Voltage? @ 100 mAVCEO(sus) = 80 Vdc (Min)?2N6058100 Vdc (Min)?2N6052, 2N6059\n? Monolithic Construction with Built-In Base-Emitter Shunt Resistors\n? This is a Pb-Free Device; | ONSEMI 安森美半導體 | ONSEMI | |
2N6052 | Package:TO-204AA,TO-3;包裝:散裝 類別:分立半導體產(chǎn)品 晶體管 - 雙極性晶體管(BJT)- 單個 描述:TRANS PNP DARL 100V 12A TO204 | ONSEMI 安森美半導體 | ONSEMI | |
2N6052 | 包裝:散裝 類別:分立半導體產(chǎn)品 晶體管 - 雙極性晶體管(BJT)- 單個 描述:PNP POWER TRANSISTOR SILICON AMP | MICROCHIP 微芯科技 | MICROCHIP |
晶體管資料
- 型號:
- 別名:
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家:
- 制作材料:
Si-P+Darl+Di
- 性質(zhì):
低頻或音頻放大 (LF)_開關(guān)管 (S)_功率放大 (L
- 封裝形式:
直插封裝
- 極限工作電壓:
100V
- 最大電流允許值:
12A
- 最大工作頻率:
<1MHZ或未知
- 引腳數(shù):
2
- 可代換的型號:
BDV66A,BDW84C,BDX64B,BDX66B,BDX88C,MJ4032,TIP647,
- 最大耗散功率:
150W
- 放大倍數(shù):
β>750
- 圖片代號:
E-44
- vtest:
100
- htest:
999900
- atest:
12
- wtest:
150
產(chǎn)品屬性
- 產(chǎn)品編號:
2N6052
- 制造商:
onsemi
- 類別:
分立半導體產(chǎn)品 > 晶體管 - 雙極性晶體管(BJT)- 單個
- 包裝:
散裝
- 晶體管類型:
PNP - 達林頓
- 不同?Ib、Ic 時?Vce 飽和壓降(最大值):
3V @ 120mA,12A
- 電流 - 集電極截止(最大值):
1mA
- 不同?Ic、Vce?時 DC 電流增益 (hFE)(最小值):
750 @ 6A,3V
- 工作溫度:
-65°C ~ 200°C(TJ)
- 安裝類型:
通孔
- 封裝/外殼:
TO-204AA,TO-3
- 供應(yīng)商器件封裝:
TO-204(TO-3)
- 描述:
TRANS PNP DARL 100V 12A TO204
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
onsemi |
25+ |
TO-204(TO-3) |
11543 |
正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊 |
詢價 | ||
24+ |
TO-3 |
10000 |
全新 |
詢價 | |||
ST |
1215+ |
TO-3 |
150000 |
全新原裝,絕對正品,公司大量現(xiàn)貨供應(yīng). |
詢價 | ||
MOTOROLA |
24+ |
TO-3 |
2000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
ON |
23+ |
TO-3 |
5000 |
原裝正品,假一罰十 |
詢價 | ||
MOT |
25+ |
TO-3 |
5000 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
MOTOROLA/摩托羅拉 |
專業(yè)鐵帽 |
TO-3 |
1000 |
原裝鐵帽專營,代理渠道量大可訂貨 |
詢價 | ||
三年內(nèi) |
1983 |
只做原裝正品 |
詢價 | ||||
ON |
20+ |
TO-3 |
38900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
Microsemi |
1942+ |
N/A |
908 |
加我qq或微信,了解更多詳細信息,體驗一站式購物 |
詢價 |
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