| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS 文件：195.37 Kbytes 頁(yè)數(shù)：4 Pages | BOCA 博卡 | BOCA | ||
SILICON DARLINGTON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and switching applications. 文件：495.5 Kbytes 頁(yè)數(shù)：2 Pages | CENTRAL | CENTRAL | ||
POWER TRANSISTORS(12A,150W) DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain - 文件：188.54 Kbytes 頁(yè)數(shù)：4 Pages | MOSPEC 統(tǒng)懋 | MOSPEC | ||
POWER COMPLEMENTARY SILICON TRANSISTORS POWER COMPLEMENTARY SILICON TRANSISTORS The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types ar 文件：223.22 Kbytes 頁(yè)數(shù)：5 Pages | COMSET | COMSET | ||
Power Transistors Power Transistors 文件：347.98 Kbytes 頁(yè)數(shù)：8 Pages | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | ||
Transistor, Bipolar, TO-3, PNP, 12 A, 100 V, 150 W Description : A silicon PNP Darlington transistors in a TO-3 type case designed for general-purpose amplifier and low-frequency applications Features - High DC Current Gain - Collector-Emitter Sustaining Voltage : Vced(sus) = 100V Min @ 100mA -Monolithic Construction with Buit-in Base-Emitte 文件：174.77 Kbytes 頁(yè)數(shù)：1 Pages | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | ||
DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain - 文件：90.89 Kbytes 頁(yè)數(shù)：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | ||
DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain - 文件：90.89 Kbytes 頁(yè)數(shù)：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | ||
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS Darlington Complementary Silicon Power Transistors . . . designed for general?purpose amplifier and low frequency switching applications. ? High DC Current Gain — hFE = 3500 (Typ) @ IC = 5.0 Adc ? Collector?Emitter Sustaining Voltage — @ 100 mA VCEO(sus) = 80 Vdc (Min) — 2N6058 文件：190.17 Kbytes 頁(yè)數(shù)：6 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Darlington Complementary Silicon Power Transistors Darlington Complementary Silicon Power Transistors This package is designed for general?purpose amplifier and low frequency switching applications. Features ? High DC Current Gain — hFE = 3500 (Typ) @ IC = 5.0 Adc ? Collector?Emitter Sustaining Voltage — @ 100 mA VCEO(sus) = 100 Vdc (Min) ? M 文件：137.61 Kbytes 頁(yè)數(shù)：5 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI |
晶體管資料
- 型號(hào)：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-P+Darl+Di
- 性質(zhì)：
低頻或音頻放大 （LF）_開關(guān)管 （S）_功率放大 （L
- 封裝形式：
直插封裝
- 極限工作電壓：
100V
- 最大電流允許值：
12A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
2
- 可代換的型號(hào)：
BDV66A,BDW84C,BDX64B,BDX66B,BDX88C,MJ4032,TIP647,
- 最大耗散功率：
150W
- 放大倍數(shù)：
β>750
- 圖片代號(hào)：
E-44
- vtest：
100
- htest：
999900
- atest：
12
- wtest：
150
產(chǎn)品屬性
- 產(chǎn)品編號(hào)：
2N6052
- 制造商：
onsemi
- 類別：
分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極性晶體管（BJT）- 單個(gè)
- 包裝：
散裝
- 晶體管類型：
PNP - 達(dá)林頓
- 不同?Ib、Ic 時(shí)?Vce 飽和壓降（最大值）：
3V @ 120mA，12A
- 電流 - 集電極截止（最大值）：
1mA
- 不同?Ic、Vce?時(shí) DC 電流增益 (hFE)（最小值）：
750 @ 6A，3V
- 工作溫度：
-65°C ~ 200°C（TJ）
- 安裝類型：
通孔
- 封裝/外殼：
TO-204AA，TO-3
- 供應(yīng)商器件封裝：
TO-204（TO-3）
- 描述：
TRANS PNP DARL 100V 12A TO204
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
onsemi |
25+ |
TO-204(TO-3) |
11543 |
正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊 |
詢價(jià) | ||
24+ |
TO-3 |
10000 |
全新 |
詢價(jià) | |||
ST |
1215+ |
TO-3 |
150000 |
全新原裝,絕對(duì)正品,公司大量現(xiàn)貨供應(yīng). |
詢價(jià) | ||
MOTOROLA |
24+ |
TO-3 |
2000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
ON |
23+ |
TO-3 |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
MOT |
25+ |
TO-3 |
5000 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢價(jià) | ||
MOTOROLA/摩托羅拉 |
專業(yè)鐵帽 |
TO-3 |
1000 |
原裝鐵帽專營(yíng),代理渠道量大可訂貨 |
詢價(jià) | ||
三年內(nèi) |
1983 |
只做原裝正品 |
詢價(jià) | ||||
ON |
20+ |
TO-3 |
38900 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票 |
詢價(jià) | ||
Microsemi |
1942+ |
N/A |
908 |
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詢價(jià) |
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