| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
COMPLEMENTARY SILICON POWER TRANSISTORS Plastic medium?power complementary silicon transistors are designed for general?purpose amplifier and low?speed switching applications. Features ? High DC Current Gain ? hFE = 2500 (Typ) @ IC = 4.0 Adc ? Collector?Emitter Sustaining Voltage ? @ 100 mAdc ? VCEO(sus) = 60 Vdc (M 文件：174.34 Kbytes 頁數(shù)：6 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general–purpose amplifier and low–speed switching applications. FEATURES: ? Collector–Emitter Sustaining Voltage - VCEO(sus) = 60 V (Min) – 2N6040, 2N6043 = 80 V (Min) – 2N6041, 2N6044 文件：205.87 Kbytes 頁數(shù)：4 Pages | BOCA 博卡 | BOCA | ||
NPN SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites. 文件：71.78 Kbytes 頁數(shù)：1 Pages | CENTRAL | CENTRAL | ||
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6040 and 2N6043 Series types are Complementary Silicon Power Transistors, manufactured by the epitaxial base process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER 文件：265.81 Kbytes 頁數(shù)：2 Pages | CENTRAL | CENTRAL | ||
PNP DARLINGTON TRANSISTOR COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS 文件：137.61 Kbytes 頁數(shù)：1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | ||
POWER DERATING COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS 文件：241.09 Kbytes 頁數(shù)：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | ||
isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage -V(BR)CEO=-100V(Min) ·Collector-Emitter Saturation Voltage -VCE(sat)= -2.0V(Max) @IC=-3A APPLICATIONS ·Designed for power amplifier,high speed switching and regulated power supply applications. 文件：279.5 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):2.0V(Max) @IC=4.0A APPLICATIONS · Designed for medium power switching amplifier applications. 文件：353.19 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
POWER DERATING COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS 文件：241.09 Kbytes 頁數(shù)：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | ||
Silicon NPN Power Transistors DESCRIPTION ? With TO-220C package ? Complement to type 2N6040/6041/6042 ? DARLINGTON ? High DC current gain ? Low collector saturation voltage APPLICATIONS ? For general-purpose amplifier and low-speed switching applications 文件：106.54 Kbytes 頁數(shù)：3 Pages | SAVANTIC | SAVANTIC |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Ge-PNP
- 性質(zhì)：
低頻或音頻放大 （LF）
- 封裝形式：
直插封裝
- 極限工作電壓：
25V
- 最大電流允許值：
0.2A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
3
- 可代換的型號：
AC122,AC125,AC126,AC151,2N1191,2N1192,2N1193,2N1194,3AX53A,
- 最大耗散功率：
- 放大倍數(shù)：
β=65
- 圖片代號：
D-9
- vtest：
25
- htest：
999900
- atest：
0.2
- wtest：
0
技術(shù)參數(shù)
- Vdss(V)：
600
- Vgss(V)：
30
- Id(A)：
2
- Package：
TO-220/TO-220F/TO-22...
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
XY/星宇佳 |
21+ |
TO-252 |
72500 |
自主品牌 量大可定 |
詢價 | ||
FSC |
25+ |
TO252 |
6500 |
十七年專營原裝現(xiàn)貨一手貨源,樣品免費(fèi)送 |
詢價 | ||
FAI |
13+ |
T0252 |
2500 |
原裝現(xiàn)貨價格有優(yōu)勢量大可以發(fā)貨 |
詢價 | ||
24+ |
原廠封裝 |
5000 |
原裝現(xiàn)貨假一罰十 |
詢價 | |||
FAIRCHILD |
1215+ |
TO-220F |
150000 |
全新原裝,絕對正品,公司大量現(xiàn)貨供應(yīng). |
詢價 | ||
MOT |
24+ |
CAN3 |
8858 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強(qiáng)勢庫存! |
詢價 | ||
東光微 |
TO-220F |
3164 |
正品原裝--自家現(xiàn)貨-實(shí)單可談 |
詢價 | |||
24+ |
48234 |
詢價 | |||||
UTC |
25+ |
TO-251 |
5000 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
AAT |
23+ |
TO-220/F |
12000 |
全新原裝假一賠十 |
詢價 |
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