| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
2N5885 | Complementary Silicon High??ower Transistors Complementary silicon high?power transistors are designed for general?purpose power amplifier and switching applications. Features ? Low Collector?Emitter Saturation Voltage ? VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc ? Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage ? Excell 文件：94.94 Kbytes 頁數(shù)：6 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | |
2N5885 | COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS General-Purpose Power Amplifier and Switching Applications Features ? Low Collector?Emitter Saturation Voltage ? VCE(sat) = 1.0 V (Max) @ IC = 15 A ? Excellent DC Current Gain ? hFE = 20 ~ 100 @ IC = 10 A 文件：190.48 Kbytes 頁數(shù)：4 Pages | BOCA 博卡 | BOCA | |
2N5885 | POWER TRANSISTORS(25A,200W) General-Purpose Power Amplifier and Switching Applications Features ? Low Collector?Emitter Saturation Voltage ? VCE(sat) = 1.0 V (Max) @ IC = 15 A ? Excellent DC Current Gain ? hFE = 20 ~ 100 @ IC = 10 A 文件：183.58 Kbytes 頁數(shù)：4 Pages | MOSPEC 統(tǒng)懋 | MOSPEC | |
2N5885 | Power Transistors Power Transistors 文件：347.98 Kbytes 頁數(shù)：8 Pages | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | |
2N5885 | isc Silicon NPN Power Transistors DESCRIPTION ·DC Current Gain- : hFE= 20(Min)@IC= 10A ·Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 15A ·Complement to Type 2N5883/5884 APPLICATIONS ·Designed for general purpose power amplifier and switching applications. 文件：49.04 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | |
2N5885 | Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type 2N5883 2N5884 APPLICATIONS ·They are intended for use in power linear and switching applications 文件：117.26 Kbytes 頁數(shù)：3 Pages | JMNIC 錦美電子 | JMNIC | |
2N5885 | POWER TRANSISTORS COMPLEMENTARY SILICON ... designed for general?purpose power amplifier and switching applications. Features ? Low Collector?Emitter Saturation Voltage ? VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc ? Low Leakage Current - ICEX = 1.0 mAdc (Max) ? Excellent DC Current Gain ? hFE = 20 (Min) @ IC = 10 Adc 文件：190.04 Kbytes 頁數(shù)：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | |
2N5885 | Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type 2N5883 2N5884 ·High power dissipations APPLICATIONS ·They are intended for use in power linear and switching applications 文件：113.16 Kbytes 頁數(shù)：3 Pages | SAVANTIC | SAVANTIC | |
2N5885 | Silicon NPN Power Transistors 文件：114.74 Kbytes 頁數(shù)：3 Pages | SAVANTIC | SAVANTIC | |
2N5885 | NPN MULTI - EPITAXIAL POWER TRANSISTOR 文件：22.5 Kbytes 頁數(shù)：2 Pages | SEME-LAB | SEME-LAB |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-NPN
- 性質(zhì)：
低頻或音頻放大 （LF）_開關(guān)管 （S）_功率放大 （L
- 封裝形式：
直插封裝
- 極限工作電壓：
60V
- 最大電流允許值：
25A
- 最大工作頻率：
>4MHZ
- 引腳數(shù)：
2
- 可代換的型號：
BD366,BD368,BDY29,MJ802,2N5685,2N6274,3DK209B,
- 最大耗散功率：
200W
- 放大倍數(shù)：
- 圖片代號：
E-44
- vtest：
60
- htest：
4000100
- atest：
25
- wtest：
200
產(chǎn)品屬性
- 產(chǎn)品編號：
2N5885
- 制造商：
Microchip Technology
- 類別：
分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極性晶體管（BJT）- 單個(gè)
- 包裝：
散裝
- 描述：
PNP POWER TRANSISTOR SILICON AMP
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
MOT |
24+ |
TO-3 |
286 |
詢價(jià) | |||
ST/ON |
專業(yè)鐵帽 |
TO-3 |
550 |
原裝鐵帽專營,代理渠道量大可訂貨 |
詢價(jià) | ||
ST/ON |
專業(yè)鐵帽 |
TO-3 |
67500 |
鐵帽原裝主營-可開原型號增稅票 |
詢價(jià) | ||
Microsemi |
1942+ |
N/A |
908 |
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購物 |
詢價(jià) | ||
MICROSEMI |
25+ |
SMD |
96 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價(jià) | ||
Central |
22+ |
NA |
65 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價(jià) | ||
2N5885 |
25+ |
17 |
17 |
詢價(jià) | |||
MOTOROLA |
92+ |
TO-3 |
16 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
Microsemi Corporation |
2022+ |
- |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷 |
詢價(jià) | ||
MOT/RCA |
2023+ |
TO-3 |
50000 |
原裝現(xiàn)貨 |
詢價(jià) |
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