Complementary Silicon High??ower Transistors

Complementary silicon high?power transistors are designed for general?purpose power amplifier and switching applications. Features ? Low Collector?Emitter Saturation Voltage ? VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc ? Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage ? Excell

文件：94.94 Kbytes 頁數(shù)：6 Pages

ONSEMI

安森美半導(dǎo)體

Trans GP BJT PNP 80V 25A 3-Pin(2+Tab) TO-204 Tray

NJS

Package：TO-204AA，TO-3；包裝：管件 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS PNP 80V 25A TO204

ONSEMI

安森美半導(dǎo)體

Complementary Silicon High??ower Transistors

Complementary silicon high?power transistors are designed for general?purpose power amplifier and switching applications. Features ? Low Collector?Emitter Saturation Voltage ? VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc ? Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage ? Excell

文件：94.94 Kbytes 頁數(shù)：6 Pages

ONSEMI

安森美半導(dǎo)體

COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS

General-Purpose Power Amplifier and Switching Applications Features ? Low Collector?Emitter Saturation Voltage ? VCE(sat) = 1.0 V (Max) @ IC = 15 A ? Excellent DC Current Gain ? hFE = 20 ~ 100 @ IC = 10 A

文件：190.48 Kbytes 頁數(shù)：4 Pages

BOCA

博卡

COMPLEMENTARY SILICON HIGH POWER TRANSISTORS

DESCRIPTION The 2N5884 and 2N5886 are complementary silicon power transistor in Jedec TO-3 metal case inteded for use in power linear amplifiers and switching applications. ■ SGS-THOMSON PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES ■ HIGH CURRENT CAPABILITY APPLICATION

文件：68.98 Kbytes 頁數(shù)：4 Pages

STMICROELECTRONICS

意法半導(dǎo)體