EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, HIGH VOLTAGE)

GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES ? High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V ? Low Leakage Current. : ICBO=50nA(Max.), VCB=120V ? Low Saturation Voltage : VCE(sat)=0.2V(Max.), IC=50mA, IB=5mA ? Low Noise : NF=8dB (Max.)

文件：164.94 Kbytes 頁數(shù)：2 Pages

KEC

KEC(Korea Electronics)

TO-92 PACKAGE

文件：30.23 Kbytes 頁數(shù)：1 Pages

KEC

KEC(Korea Electronics)

GENERAL PURPOSE TRANSISTORS

文件：707.49 Kbytes 頁數(shù)：6 Pages

AITSEMI

創(chuàng)瑞科技

NPN Silicon Transistor

Descriptions ? General purpose amplifier ? High voltage application Features ? High collector breakdown voltage : VCBO = 180V, VCEO = 160V ? Low collector saturation voltage : VCE(sat)=0.5V(MAX.)

文件：252.17 Kbytes 頁數(shù)：4 Pages

AUK

HIGH VOLTAGE NPN SWITCHING TRANSISTOR IN A

FEATURES ? SILICON PLANAR EPITAXIAL NPN TRANSISTOR ? HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) ? CECC SCREENING OPTIONS APPLICATIONS: Hermetically sealed surface mount 2N5551 for high reliability / space applications requiring small size and low weight devices.

文件：40.33 Kbytes 頁數(shù)：2 Pages

SEME-LAB

TO-92 PACKAGE

文件：30.23 Kbytes 頁數(shù)：1 Pages

KEC

KEC(Korea Electronics)

EPITAXIAL PLANAR NPN TRANSISTOR

文件：37.94 Kbytes 頁數(shù)：2 Pages

KEC

KEC(Korea Electronics)

General Purpose Transistor, TO-92, 160V, 0.6A

? High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V \n? Low saturation Voltage : VCE(sat)=0.2V(max.) \n? Low Noise : NF=8dB (max.);

KEC

NPN Silicon Transistor

Kodenshi-AUK

Bipolar Junction Transistors

TT Electronics