EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, HIGH VOLTAGE)

GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES ? High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V ? Low Leakage Current. : ICBO=-50nA(Max.) @VCB=-120V ? Low Saturation Voltage : VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA ? Low Noise : NF=8dB (Max.)

文件：147.26 Kbytes 頁數(shù)：2 Pages

KEC

KEC(Korea Electronics)

絲?。?a target="_blank" title="Marking" href="/2l/marking.html">2L；Package：SOT-23；High Voltage Transistor

FEATURE ● We declare that the material of product compliance with RoHS requirements.

文件：231.35 Kbytes 頁數(shù)：5 Pages

FS

絲印：ZE；Package：SOT23；PNP Switching Transistor

Features - Epoxy meets UL-94 V-0 flammability rating. - Moisture sensitivity Level 1.

文件：1.34387 Mbytes 頁數(shù)：4 Pages

TECHPUBLIC

臺舟電子

EPITAXIAL PLANAR PNP TRANSISTOR

文件：39.6 Kbytes 頁數(shù)：2 Pages

KEC

KEC(Korea Electronics)

EPITAXIAL PLANAR PNP TRANSISTOR

文件：350.54 Kbytes 頁數(shù)：2 Pages

KEC

KEC(Korea Electronics)

EPITAXIAL PLANAR PNP TRANSISTOR

文件：39.6 Kbytes 頁數(shù)：2 Pages

KEC

KEC(Korea Electronics)

絲印：B2L；Package：SOT-89；PNP Transistor

文件：680.25 Kbytes 頁數(shù)：3 Pages

PJSEMI

平晶半導(dǎo)體

General Purpose Transistor, SOT-23, -150V, -0.6A

? High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V\n? Low saturation Voltage : VCE(sat)=-0.5V(max.) \n? Low Noise : NF=8dB (max.);

KEC

PNP Switching Transister

Techpublic

臺舟電子

TRANSISTOR:High Volatage

First Silicon