Type 2N5109 Geometry 1007 Polarity NPN

Features: ? VHF-UHF amplifier silicon transistor. ? Housed in TO-39 case. ? Also available in chip form using the 1007 chip geometry. ? The Min and Max limits shown are per MIL-PRF-19500/398 which Semicoa meets in all cases.

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SEMICOA

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: The 2N5109 is a silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. It is also suitable for oscillator and frequency-multiplier functions. Features · Silicon NPN, To-39 packaged VHF/UHF Transisto

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ADPOW

PNP SILICON POWER TRANSISTOR

PNP Silicon Power Transistor

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體公司

Linear Systems replaces discontinued Siliconix

Linear Systems replaces discontinued Siliconix 2N5114 This analog switch is designed for inverting switching into inverting input of an Operational Amplifier. The hermetically sealed TO-18 package is well suited for hi-reliability and harsh environment applications. FEATURES ? DIRECT REPLACEMEN

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MICROSS

P-CHANNEL J-FET

DESCRIPTION This leaded device is available in high-reliability equivalents for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. FEATURES ? Surface mount equivalent to JEDEC registered 2N5116. ? Screen

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MICROSEMI

美高森美

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

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INTERSIL

P-Channel JFET Switch

GENERAL DESCRIPTION Ideal for inverting switching or Virtual Gnd switching into inverting input of Op. Amp. No driver is required and ±10VAC signals can be handled using only +5V logic (TTL or CMOS). FEATURES ? Low ON Resistance ? ID(off)

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CALOGIC

SILICON P-CHANNEL JFETS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5114, 2N5115, and 2N5116 are silicon P-Channel JFETs designed for switching applications.

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CENTRAL

P-Channel Silicon Junction Field-Effect Transistor

● Analog Switches Absolute maximum ratings at TA = 25°C Reverse Gate Source & Reverse Gate Drain Voltage – 40 V Gate Current 50 mA Continuous Device Power Dissipation 500mW Power Derating

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INTERFET

SINGLE P-CHANNEL JFET

FEATURES ● DIRECT REPLACEMENT FOR SILICONIX 2N5114 ● LOW ON RESISTANCE 75? ● LOW CAPACITANCE 6pF

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LINEAR