| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
2N4231A | POWER TRANSISTORS(5A,75W) COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0. 文件:189.54 Kbytes 頁(yè)數(shù):4 Pages | MOSPEC 統(tǒng)懋 | MOSPEC | |
2N4231A | COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex = 文件:95.36 Kbytes 頁(yè)數(shù):2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | |
2N4231A | COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex = 文件:95.36 Kbytes 頁(yè)數(shù):2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | |
2N4231A | COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0. 文件:196.45 Kbytes 頁(yè)數(shù):4 Pages | BOCA 博卡 | BOCA | |
2N4231A | Power Transistors Power Transistors TO-66 Case 文件:51.32 Kbytes 頁(yè)數(shù):1 Pages | CENTRAL | CENTRAL | |
2N4231A | Bipolar NPN Device in a Hermetically sealed TO66 文件:15.16 Kbytes 頁(yè)數(shù):1 Pages | SEME-LAB | SEME-LAB | |
2N4231A | COMPLEMENTARY SILICON POWER TRANSISTORS 文件:344.67 Kbytes 頁(yè)數(shù):2 Pages | CENTRAL | CENTRAL | |
COMPLEMENTARY SILICON POWER TRANSISTORS 文件:344.67 Kbytes 頁(yè)數(shù):2 Pages | CENTRAL | CENTRAL | ||
2N4231A | 75W NPN Medium Power BJT Transistor This BJT is packaged in TO-66 package.\n\n Available as High Reliability device per MIL-PRF-19500 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish. | Digitron | Digitron | |
2N4231A | 三極管 | Mospec 統(tǒng)懋 | Mospec |
晶體管資料
- 型號(hào):
- 別名:
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家:
- 制作材料:
Si-NPN
- 性質(zhì):
低頻或音頻放大 (LF)_開(kāi)關(guān)管 (S)_功率放大 (L
- 封裝形式:
直插封裝
- 極限工作電壓:
50V
- 最大電流允許值:
5A
- 最大工作頻率:
>4MHZ
- 引腳數(shù):
2
- 可代換的型號(hào):
BC243,BD539A,BD949,2N3054,3DD67B,
- 最大耗散功率:
75W
- 放大倍數(shù):
- 圖片代號(hào):
E-44
- vtest:
50
- htest:
4000100
- atest:
5
- wtest:
75
技術(shù)參數(shù)
- VCBO (V):
40
- VCEO (V):
40
- PD (W):
75
- PACKAGE:
TO-66
- NPN:
2N4231A
- PNP:
2N6312
- HFE (Min/Max):
25/100
- IC/VCE (A/V):
1.5/2.0
- VCE(SAT) (V):
0.7
- IC / IB (A/mA):
1.5/150
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
24+ |
TO-66 |
10000 |
全新 |
詢(xún)價(jià) | |||
MOT |
專(zhuān)業(yè)鐵帽 |
TO-3 |
67500 |
鐵帽原裝主營(yíng)-可開(kāi)原型號(hào)增稅票 |
詢(xún)價(jià) | ||
ISC/固電 |
23+ |
TO-66 |
4000 |
原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道??商峁┐罅繋?kù)存,詳 |
詢(xún)價(jià) | ||
MOTOROLA |
24+ |
TO-39 |
1000 |
原裝現(xiàn)貨假一罰十 |
詢(xún)價(jià) | ||
NES |
新 |
15 |
全新原裝 貨期兩周 |
詢(xún)價(jià) | |||
MOTOROLA |
專(zhuān)業(yè)鐵帽 |
TO-39 |
1000 |
原裝鐵帽專(zhuān)營(yíng),代理渠道量大可訂貨 |
詢(xún)價(jià) | ||
CENTRAL |
1323+ |
CAN3 |
61 |
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力 |
詢(xún)價(jià) | ||
24+ |
N/A |
53000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢(xún)價(jià) | |||
CENTRAL |
23+ |
CAN3 |
61 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢(xún)價(jià) | ||
CENTRAL |
22+ |
CAN3 |
20000 |
公司只有原裝 品質(zhì)保證 |
詢(xún)價(jià) |
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