EPITAXIAL PLANAR PNP TRANSISTOR

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ? Low Leakage Current : ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. ? Excellent DC Current Gain Linearity. ? Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. ? Complementary to 2N3904SC.

文件：707.9 Kbytes 頁數(shù)：3 Pages

KEC

KEC(Korea Electronics)

General Purpose Transistor, SOT-23(1), -40V, -0.2A

? Excellent DC Current Gain Linearity\n? Low Saturation Voltage \n? Complementary to 2N3904SC;

KEC

PNP General Purpose Amplifier

Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA.

文件：654.29 Kbytes 頁數(shù)：10 Pages

FAIRCHILD

仙童半導(dǎo)體

PNP General Purpose Amplifier

Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA.

文件：154.16 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

PNP General-Purpose Amplifier

Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA.

文件：421.71 Kbytes 頁數(shù)：13 Pages

ONSEMI

安森美半導(dǎo)體