EPITAXIAL PLANAR NPN TRANSISTOR

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ? Low Leakage Current : ICEX=50nA(Max.), IBL=50nA(Max.) @VCE=30V, VEB=3V. ? Excellent DC Current Gain Linearity. ? Low Saturation Voltage : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. ? Low Collector Output Capacitance

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KEC

KEC(Korea Electronics)

EPITAXIAL PLANAR NPN TRANSISTOR

GENERAL PURPOSE APPLICATION.\nSWITCHING APPLICATION.FEATURES\n● Low Leakage Current\n?? : ICEX=50nA(Max.), IBL=50nA(Max.)\n???? @VCE=30V, VEB=3V.\n● Excellent DC Current Gain Linearity.\n● Low Saturation Voltage\n?? : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.\n● Low Collector Output Capacitance\n?? : Co ● Low Leakage Current\n?? : ICEX=50nA(Max.), IBL=50nA(Max.)\n???? @VCE=30V, VEB=3V.\n● Excellent DC Current Gain Linearity.\n● Low Saturation Voltage\n?? : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.\n● Low Collector Output Capacitance\n?? : Cob=4pF(Max.) @VCB=5V.\n● Complementary to 2N3906V.;

KEC

NPN EPITAXIAL PLANAR TRANSISTOR

文件：129.72 Kbytes 頁(yè)數(shù)：2 Pages

GTM

勤益投資控股

The G2N3904 is designed for general purpose switching and amplifier applications.

文件：131.64 Kbytes 頁(yè)數(shù)：2 Pages

ETL

亞歷電子

PNP EPITAXIAL PLANAR TRANSISTOR

Description The H2N3904 is designed for general purpose switching and amplifier applications.

文件：36.38 Kbytes 頁(yè)數(shù)：4 Pages

HSMC

華昕