EPITAXIAL PLANAR NPN TRANSISTOR

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ? Low Leakage Current : ICEX=50nA(Max.), IBL=50nA(Max.) @VCE=30V, VEB=3V. ? Excellent DC Current Gain Linearity. ? Low Saturation Voltage : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. ? Complementary to 2N3906SC.

文件：706.4 Kbytes 頁數(shù)：3 Pages

KEC

KEC(Korea Electronics)

General Purpose Transistor, SOT-23(1), 40V, 0.2A

? Excellent DC Current Gain Linearity\n? Low Saturation Voltage : VCE(sat)=03V(Max) @IC=50mA, IB=5mA\n? Complementary to 2N3906SC;

KEC

NPN General Purpose Amplifier

Description This device is designed as a general-purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.

文件：175.07 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體

NPN General - Purpose Amplifier

Description This device is designed as a general?purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.

文件：329.69 Kbytes 頁數(shù)：9 Pages

ONSEMI

安森美半導(dǎo)體

NPN General-Purpose Amplifier

Description This device is designed as a general-purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier

文件：464.96 Kbytes 頁數(shù)：13 Pages

FAIRCHILD

仙童半導(dǎo)體