NPN MEDUIM POWER SILICON TRANSISTOR

文件：50.23 Kbytes 頁數(shù)：2 Pages

MICROSEMI

美高森美

NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393

文件：55.11 Kbytes 頁數(shù)：2 Pages

MICROSEMI

美高森美

NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393

文件：55.11 Kbytes 頁數(shù)：2 Pages

MICROSEMI

美高森美

NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393

文件：55.11 Kbytes 頁數(shù)：2 Pages

MICROSEMI

美高森美

Bipolar NPN Device in a Hermetically sealed

文件：14.66 Kbytes 頁數(shù)：1 Pages

SEME-LAB

Bipolar NPN Device in a Hermetically sealed

文件：15.41 Kbytes 頁數(shù)：1 Pages

SEME-LAB

Transistor GP BJT NPN 3-Pin 60V 3A 1000mW TO-39

This family of 2N3418 through 2N3421 high-frequency, epitaxial planar NPN transistors have a low saturation voltage, and are military qualified up to the JANS level for high-relliability applications. These transistors are available in a standard TO-205AA (TO-5) package as well as a TO-205AD (TO-39 JEDEC registered 2N3418 through 2N3421 series\nJANHC, JANKC, JAN,JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/393\nRoHS compliant versions available (commercial grade only)\nVCE(sat) = 0.25 V @ Ic = 1 A\nRise time tr = 0.22 μs max @ IC = 1.0 A, IB1 = 100 mA\nFall time tf = ;

Microchip

微芯科技

Package：TO-205AD，TO-39-3 金屬罐；包裝：散裝 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS NPN 60V 3A TO39

MICROCHIP

微芯科技