EPITAXIAL PLANAR PNP TRANSISTOR

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ● Low Leakage Current : ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. ● Excellent DC Current Gain Linearity. ● Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. ● Low Collector

文件：54.34 Kbytes 頁數(shù)：4 Pages

KEC

KEC(Korea Electronics)

EPITAXIAL PLANAR PNP TRANSISTOR

文件：782.96 Kbytes 頁數(shù)：4 Pages

KEC

KEC(Korea Electronics)

EPITAXIAL PLANAR PNP TRANSISTOR

GENERAL PURPOSE APPLICATION.\nSWITCHING APPLICATION.FEATURES\n● Low Leakage Current\n???? : ICEX=-50nA(Max.), IBL=-50nA(Max.)\n???????????????????? @VCE=-30V, VEB=-3V.\n● Excellent DC Current Gain Linearity.\n● Low Saturation Voltage\n??? : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA.\n● Low Collector O ● Low Leakage Current\n???? : ICEX=-50nA(Max.), IBL=-50nA(Max.)\n???????????????????? @VCE=-30V, VEB=-3V.\n● Excellent DC Current Gain Linearity.\n● Low Saturation Voltage\n??? : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA.\n● Low Collector Output Capacitance\n??? : Cob=4.5pF(Max.) @VCB=5V.;

KEC

PNP SMALL SIGNAL SILICON TRANSISTOR

RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291

文件：68.47 Kbytes 頁數(shù)：2 Pages

MICROSEMI

美高森美

PNP SMALL SIGNAL SILICON TRANSISTOR

RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291

文件：68.47 Kbytes 頁數(shù)：2 Pages

MICROSEMI

美高森美

PNP SMALL SIGNAL SILICON TRANSISTOR

RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291

文件：68.47 Kbytes 頁數(shù)：2 Pages

MICROSEMI

美高森美