SWITCHING TRANSISTOR NPN SILICON

FEATURES: ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/255 AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS LOW VCE(sat): .3V @ IC = 150 mAdc

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MICROSEMI

美高森美

SWITCHING TRANSISTOR NPN SILICON

FEATURES: ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/255 AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS LOW VCE(sat): .3V @ IC = 150 mAdc

文件：44.34 Kbytes 頁數(shù)：2 Pages

MICROSEMI

美高森美

General Purpose Transistor

General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC?89 package which is designed for low power surface mount applications. Features ? We declare that the material of product compliance with RoHS requirement

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FS

Hi-Rel 40 V - 0.8 A NPN transistor

Description This bipolar transistor is able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID). Qualified as per ESCC 5201/002 specification and available in LCC-3 and UB hermetic packages, it is specifically recommended for

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STMICROELECTRONICS

意法半導體

NPN SILICON SWITCHING TRANSISTOR

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MICROSEMI

美高森美