絲?。?strong>2J9；Package：DFN4C；TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic

Features Ultra small package DFN4C/DFN4F (1.0 mm x 1.0 mm; t 0.38 mm (Typ.)). High Ripple rejection ratio 100 dB (Typ.) @1 kHz (VOUT = 2.8 V) High Ripple rejection ratio 93 dB (Typ.) @10 kHz (VOUT = 2.8 V) High Ripple rejection ratio 68 dB (Typ.) @100 kHz (VOUT = 2.8 V) High Ripple rejection

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TOSHIBA

東芝

絲?。?a target="_blank" title="Marking" href="/2j9u/marking.html">2J9U；Package：WSON；JFE2140 Ultra-Low Noise, Matched, Dual, Low-Gate Current, Discrete, Audio, N?Channel JFET

1 Features ? Ultra-low noise: – Voltage noise: ? 0.9 nV/√Hz at 1 kHz, IDS = 5 mA ? 1.1 nV/√Hz at 1 kHz, IDS = 2 mA – Current noise: 1.6 fA/√Hz at 1 kHz ? Low VGS mismatch: 4 mV (max) ? Low gate current: 10 pA (max) ? Low input capacitance: 13 pF at VDS = 5 V ? High gate-to-drain and gate-

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TI

德州儀器