絲印：2G；Package：SOD323；40 V, 0.75 A medium power Schottky barrier rectifier

1. General description Medium power Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits ? Forward current: IF ≤ 0.75 A ? Reverse voltage: VR ≤ 40 V

文件：226.38 Kbytes 頁數(shù)：10 Pages

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絲?。?strong>2G；Package：SOT23；NPN general purpose transistors

FEATURES ?Low current (max. 100 mA) ?Low voltage (max. 45 V). APPLICATIONS ?General purpose switching and amplification. DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements: BC859 and BC860.

文件：356.32 Kbytes 頁數(shù)：9 Pages

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絲?。?strong>2G；Package：SOT323；NPN general purpose transistors

FEATURES ?Low current (max. 100 mA) ?Low voltage (max. 45 V).

文件：330.41 Kbytes 頁數(shù)：8 Pages

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絲?。?strong>2G；Package：SOT-23；General Purpose Transistors

General Purpose Transistors NPN Silicon ? Moisture Sensitivity Level: 1 ? ESD Rating – Human Body Model: >4000 V – Machine Model: >400 V

文件：277.78 Kbytes 頁數(shù)：6 Pages

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絲?。?strong>2G；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits ? Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：328.92 Kbytes 頁數(shù)：14 Pages

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絲?。?strong>2G；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits ? Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：329.42 Kbytes 頁數(shù)：14 Pages

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絲印：2G；Package：SOT-23；PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * Gain of 50 at IC =100mA

文件：37.26 Kbytes 頁數(shù)：1 Pages

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絲印：2G；Package：SOT-23；SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * Gain of 50 at IC =100mA

文件：57.8 Kbytes 頁數(shù)：1 Pages

ZETEX

絲?。?strong>2G；Package：SOT-23；Driver Transistor

Driver Transistor ? Collector-Emitter Voltage: VCEO = KST55: - 60V KST56: - 80V ? Collector Power Dissipation: PC (max) = 350mW ? Complement to KST05/06

文件：44.97 Kbytes 頁數(shù)：3 Pages

FAIRCHILD

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絲?。?strong>2G；Package：DFN2020-6；30 V, 2 A NPN/NPN low VCEsat (BISS) transistor

1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4230PANP. PNP/PNP complement: PBSS5230PAP. 2. Features and benefits ? Very low collec

文件：752.18 Kbytes 頁數(shù)：17 Pages

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