2ED314xMC12L (2ED-X3 Compact) Dual-channel isolated gate driver IC with dead-time control

Features ? Dual-channel isolated gate driver ? For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs ? Up to 6.5 A typical peak output current ? 39 ns propagation delay with 5 ns channel-to-channel delay mismatch (skew) ? 35 V absolute maximum output supply voltage ? High c

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6.5 A、5.7 kV (rms) 雙通道隔離柵極驅(qū)動器，帶死區(qū)控制，經(jīng) UL 1577 認(rèn)證，11 V UVLO

? For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs\n? 2300 V functional offset voltage capable for selected applications\n? Galvanically isolated coreless transformer gate driver\n? Up to 6.5 A typical peak output current\n? 39 ns propagation delay\n? 35 V absolute maximum out;

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DIP

HW

漢威光電

上傳：深圳市弘為電子有限公司

SOP8

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上傳：深圳市科芯源微電子有限公司

14-DSO

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上傳：深圳市科芯源微電子有限公司