D and DO fuse links and bases

文件：366.39 Kbytes 頁數(shù)：12 Pages

COOPER

DATA SUBJECT TO CHANGE WITHOUT NOTLCE

文件：96.18 Kbytes 頁數(shù)：1 Pages

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

DATA SUBJECT TO CHANGE WITHOUT NOTLCE

文件：96.77 Kbytes 頁數(shù)：1 Pages

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

DATA SUBJECT TO CHANGE WITHOUT NOTLCE

文件：94.67 Kbytes 頁數(shù)：1 Pages

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

DATA SUBJECT TO CHANGE WITHOUT NOTLCE

文件：93.91 Kbytes 頁數(shù)：1 Pages

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

DATA SUBJECT TO CHANGE WITHOUT NOTLCE

文件：93.09 Kbytes 頁數(shù)：1 Pages

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

UL-Series - UL489 Miniature Molded Case Circuit Breaker

文件：1.43953 Mbytes 頁數(shù)：1 Pages

ALTECH

絲印：2D2N06CL；Package：LFPAK4；MOSFET ??Power, Single N-Channel 60 V, 2.0 m, 185 A

Features ? Small Footprint (5x6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? LFPAK4 Package, Industry Standard ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant

文件：346.02 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

絲印：2D2S40Y；Package：SOT669；N-channel 40 V, 2.2 mΩ, 180 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

1. General description 180 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. Features and benefits ? 180

文件：309.41 Kbytes 頁數(shù)：13 Pages

NEXPERIA

安世

絲印：2D2T；Package：SOT-23；TLV767 1-A, 16-V Precision Linear Voltage Regulator

文件：5.22211 Mbytes 頁數(shù)：45 Pages

TI

德州儀器