絲?。?strong>2B7；Package：SOT323；NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features - Epitaxial Planar Die Construction - Built-In Biasing Resistors - Surface Mount Package Suited for Automated Assembly - Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) - Qualified to AEC-Q101 Standards for High Reliability

文件：457.38 Kbytes 頁數(shù)：7 Pages

DIODES

美臺半導(dǎo)體

絲?。?strong>2B7；Package：SOT323；NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features - Epitaxial Planar Die Construction - Built-In Biasing Resistors - Surface Mount Package Suited for Automated Assembly - Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) - Qualified to AEC-Q101 Standards for High Reliability

文件：457.38 Kbytes 頁數(shù)：7 Pages

DIODES

美臺半導(dǎo)體

絲印：2B7；Package：MELF；500mW SURFACE MOUNT ZENER DIODE

Planar Die Construction 500mW Power Dissipation 2.0 – 56V Nominal Zener Voltage Ideally Suited for Automated Assembly For Use in Voltage Stabilizer or Reference

文件：65.93 Kbytes 頁數(shù)：6 Pages

WTE

Won-Top Electronics

絲印：2B7；Package：SOD-123FL；ZENER DIODE

Features Glass passivated chip Built-in strain relief Low inductance High peak reverse power dissipation Low reverse leakage For use in stabilizing and clipping with high power rating RoHS compliant

文件：518.82 Kbytes 頁數(shù)：3 Pages

DAESAN

絲?。?strong>2B7；Package：SSOP5-P-0.95；Point Regulators (Low-Dropout Regulator)

Features ? Low stand-by current ? Overtemperature/overcurrent protection ? Operation voltage range is wide. ? Maximum output current is high. ? Difference between input voltage and output voltage is low. ? Small package. (SOT-23 5pin) ? Ceramic capacitors can be used.

文件：395.39 Kbytes 頁數(shù)：23 Pages

TOSHIBA

東芝

絲?。?strong>2B7；Package：SMB；Surface Mount Zener Diodes

文件：257.31 Kbytes 頁數(shù)：3 Pages

ANOVA

林朋科技

絲印：2B7259B；Package：DSO14-150mil；Dual-channel isolated gate-driver ICs in 150 mil DSO package

Features ? 2-channel isolated gate driver for Si and SiC MOSFETs and GaN HEMTs power switches ? Fast input-to-output propagation (38 ns) with excellent stability (+9/-5 ns) ? Strong output stage: 5 A/9 A source/sink ? Fast output clamping for VDDA/B

文件：4.28606 Mbytes 頁數(shù)：32 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/2b7259b/marking.html">2B7259B；Dual-channel isolated gate-driver ICs in 150 mil DSO package

Features ? 2-channel isolated gate driver for Si and SiC MOSFETs and GaN HEMTs power switches ? Fast input-to-output propagation (38 ns) with excellent stability (+9/-5 ns) ? Strong output stage: 5 A/9 A source/sink ? Fast output clamping for VDDA/B

文件：4.28606 Mbytes 頁數(shù)：32 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/2b7c/marking.html">2B7C；Package：SOT-23(DBV)；INA281, –4-V to 110-V, 1.3-MHz Current-Sense Amplifier

1 Features ? Wide common-mode voltage: – Operational voltage: ?4 V to +110 V – Survival voltage: ?20 V to +120 V ? Excellent CMRR: – 120-dB DC CMRR – 65-dB AC CMRR at 50 kHz ? Accuracy: – Gain: ? Gain error: ±0.5% (maximum) ? Gain drift: ±20 ppm/°C (maximum) – Offset: ? Offset volt

文件：1.30639 Mbytes 頁數(shù)：30 Pages

TI

德州儀器

絲印：2B7C；Package：SOT-23(DBV)；INA281, –4-V to 110-V, 1.3-MHz Current-Sense Amplifier

1 Features ? Wide common-mode voltage: – Operational voltage: ?4 V to +110 V – Survival voltage: ?20 V to +120 V ? Excellent CMRR: – 120-dB DC CMRR – 65-dB AC CMRR at 50 kHz ? Accuracy: – Gain: ? Gain error: ±0.5% (maximum) ? Gain drift: ±20 ppm/°C (maximum) – Offset: ? Offset volt

文件：1.30639 Mbytes 頁數(shù)：30 Pages

TI

德州儀器