64K (8K x 8) CMOS E2PROM with Page Write and Software Data Protection

Description The AT28C64B is a high-performance electrically-erasable and programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation

文件：660.56 Kbytes 頁數(shù)：12 Pages

ATMEL

愛特梅爾

64K (8K x 8) Parallel EEPROM with Page Write and Software Data Protection

Features ? Fast Read Access Time – 150 ns ? Automatic Page Write Operation – Internal Address and Data Latches for 64 Bytes ? Fast Write Cycle Times – Page Write Cycle Time: 10 ms Maximum – 1 to 64-byte Page Write Operation ? Low Power Dissipation – 40 mA Active Current – 100 μA CMOS Stan

文件：291.24 Kbytes 頁數(shù)：12 Pages

SYC

64K (8K x 8) CMOS EEPROM

DESCRIPTION The Microchip Technology Inc. 28C64A is a CMOS 64K non volatile electrically Erasable PROM. The 28C64A is accessed like a static RAM for the read or write cycles with out the need of external components. During a “byte write”, the address and data are latched internally, freeing the

文件：67.93 Kbytes 頁數(shù)：8 Pages

MICROCHIP

微芯科技

64K - BIT CMOS E2PROM

DESCRIPTION The CAT28C64A/CAT28C64AI is a fast, low power, 5V-only CMOS E3PROM organized as 8K x 8 bits. It requires a simple interface for in-system programming. On-chip address and data latches, self-timed write cycle eliminate additional timing and protection hardware.

文件：238.21 Kbytes 頁數(shù)：8 Pages

CATALYST

64K (8K x 8) CMOS EEPROM

DESCRIPTION The Microchip Technology Inc. 28C64A is a CMOS 64K non volatile electrically Erasable PROM. The 28C64A is accessed like a static RAM for the read or write cycles with out the need of external components. During a “byte write”, the address and data are latched internally, freeing the

文件：67.93 Kbytes 頁數(shù)：8 Pages

MICROCHIP

微芯科技

64K (8K x 8) CMOS EEPROM

DESCRIPTION The Microchip Technology Inc. 28C64A is a CMOS 64K non volatile electrically Erasable PROM. The 28C64A is accessed like a static RAM for the read or write cycles with out the need of external components. During a “byte write”, the address and data are latched internally, freeing the

文件：67.93 Kbytes 頁數(shù)：8 Pages

MICROCHIP

微芯科技

64K (8K x 8) CMOS EEPROM

DESCRIPTION The Microchip Technology Inc. 28C64A is a CMOS 64K non volatile electrically Erasable PROM. The 28C64A is accessed like a static RAM for the read or write cycles with out the need of external components. During a “byte write”, the address and data are latched internally, freeing the

文件：67.93 Kbytes 頁數(shù)：8 Pages

MICROCHIP

微芯科技

64K (8K x 8) CMOS EEPROM

DESCRIPTION The Microchip Technology Inc. 28C64A is a CMOS 64K non volatile electrically Erasable PROM. The 28C64A is accessed like a static RAM for the read or write cycles with out the need of external components. During a “byte write”, the address and data are latched internally, freeing the

文件：67.93 Kbytes 頁數(shù)：8 Pages

MICROCHIP

微芯科技

64K (8K x 8) CMOS EEPROM

DESCRIPTION The Microchip Technology Inc. 28C64A is a CMOS 64K non volatile electrically Erasable PROM. The 28C64A is accessed like a static RAM for the read or write cycles with out the need of external components. During a “byte write”, the address and data are latched internally, freeing the

文件：67.93 Kbytes 頁數(shù)：8 Pages

MICROCHIP

微芯科技

64K (8K x 8) CMOS EEPROM

DESCRIPTION The Microchip Technology Inc. 28C64A is a CMOS 64K non volatile electrically Erasable PROM. The 28C64A is accessed like a static RAM for the read or write cycles with out the need of external components. During a “byte write”, the address and data are latched internally, freeing the

文件：67.93 Kbytes 頁數(shù)：8 Pages

MICROCHIP

微芯科技