絲?。?strong>28C51；Package：SOIC；UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs

1 Features ? Undervoltage lockout options to support both Si and SiC MOSFET applications ? 30-V VDD absolute maximum voltage ? 1-MHz maximum fixed frequency operation ? 50-μA startup current, 75-μA maximum ? Low operating current: 1.3 mA (at fOSC = 52 kHz) ? Fast 35-ns, cycle-by-cycle overc

文件：3.39027 Mbytes 頁數(shù)：53 Pages

TI

德州儀器

絲?。?strong>28C51；Package：SOIC；UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs

1 Features ? Undervoltage lockout options to support both Si and SiC MOSFET applications ? 30-V VDD absolute maximum voltage ? 1-MHz maximum fixed frequency operation ? 50-μA startup current, 75-μA maximum ? Low operating current: 1.3 mA (at fOSC = 52 kHz) ? Fast 35-ns, cycle-by-cycle overc

文件：3.46603 Mbytes 頁數(shù)：56 Pages

TI

德州儀器

絲印：28C51；Package：SOIC；UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs

1 Features ? Undervoltage lockout options to support both Si and SiC MOSFET applications ? 30-V VDD absolute maximum voltage ? 1-MHz maximum fixed frequency operation ? 50-μA startup current, 75-μA maximum ? Low operating current: 1.3 mA (at fOSC = 52 kHz) ? Fast 35-ns, cycle-by-cycle overc

文件：3.20649 Mbytes 頁數(shù)：56 Pages

TI

德州儀器

512K-Bit CMOS PARALLEL EEPROM

DESCRIPTION The CAT28C512/513 is a fast,low power, 5V-only CMOS parallel EEPROM organized as 64K x 8-bits. It requires a simple interface for in-system programming. On-chip address and data latches, self-timed write cycle with auto-clear and VCC power up/down write protection eliminate additional

文件：94.58 Kbytes 頁數(shù)：12 Pages

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