16,384-Bit (2048 x 8) UV Erasable CMOS PROM Military Qualified

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NSC

國半

16,384-Bit (2048 x 8) UV Erasable CMOS PROM Military Qualified

General Description\nThe 27C16 is a high speed 16K UV erasable and electrically reprogrammable CMOS EPROM, ideally suited for applications where fast turnaround, pattern experimentation and low power consumption are important requirements. Access time down to 450 ns\nLow CMOS power consumption\n?? Active Power: 26.25 mW max\n?? Standby Power: 0.53 mW max (98% savings)\nPerformance compatible to NSC800TM CMOS microprocessor\nSingle 5V power supply\nPin compatible to MM2716 and higher density EPROMs\nStaticDno clocks required\nTTL c;

TI

德州儀器

16 Mbit 2Mb x8 or 1Mb x16 UV EPROM and OTP EPROM

DESCRIPTION The M27C160 is a 16 Mbit EPROM offered in the two ranges UV (ultra violet erase) and OTP (one time programmable). It is ideally suited for micro processor systems requiring large data or program storage and is organised as either 2 Mbit words of 8 bit or 1 Mbit words of 16 bit. The

文件：187.33 Kbytes 頁數(shù)：19 Pages

STMICROELECTRONICS

意法半導(dǎo)體

16M-BIT [2M x 8/1M x 16] CMOS OTP ROM

GENERAL DESCRIPTION The MX27C1610 is a 16M-bit, One Time Programmable Read Only Memory. It is organized as 2M x 8 or 1M x 16 and has a static standby mode, and features fast programming. For programming outside from the system, existing EPROM programmers may be used. The MX27C1610 supports a inte

文件：321.1 Kbytes 頁數(shù)：19 Pages

MCNIX

????????????旺宏電子

16M-BIT [2M x 8/1M x 16] CMOS OTP ROM

GENERAL DESCRIPTION The MX27C1610 is a 16M-bit, One Time Programmable Read Only Memory. It is organized as 2M x 8 or 1M x 16 and has a static standby mode, and features fast programming. For programming outside from the system, existing EPROM programmers may be used. The MX27C1610 supports a inte

文件：321.1 Kbytes 頁數(shù)：19 Pages

MCNIX

????????????旺宏電子

16K (2K x 8) CMOS EEPROM

DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m

文件：64.66 Kbytes 頁數(shù)：8 Pages

MICROCHIP

微芯科技

16K (2K x 8) CMOS EEPROM

DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m

文件：64.66 Kbytes 頁數(shù)：8 Pages

MICROCHIP

微芯科技

16K (2K x 8) CMOS EEPROM

DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m

文件：64.66 Kbytes 頁數(shù)：8 Pages

MICROCHIP

微芯科技

16K (2K x 8) CMOS EEPROM

DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m

文件：64.66 Kbytes 頁數(shù)：8 Pages

MICROCHIP

微芯科技

16K (2K x 8) CMOS EEPROM

DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. Dur ing a “byte write”, the address and data are latched internally, freeing the m

文件：64.66 Kbytes 頁數(shù)：8 Pages

MICROCHIP

微芯科技