ENGINEERS CUTTING TOOLS

文件：3.25271 Mbytes 頁數(shù)：24 Pages

PRESTO

包裝：散裝 類別：標(biāo)簽，標(biāo)志，護欄，標(biāo)識 標(biāo)志，銘牌，招貼 描述：B302 SAFETY SIGNS BLK/RED/WHT

Brady Corporation

包裝：散裝 類別：標(biāo)簽，標(biāo)志，護欄，標(biāo)識 標(biāo)志，銘牌，招貼 描述：B302 SAFETY SIGNS BLK/RED/WHT

Brady Corporation

RF Power Field Effect Transistor

880 MHz, 10 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common-source amplifier applica

文件：574.41 Kbytes 頁數(shù)：15 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed primarily for CW large- signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

文件：1.19064 Mbytes 頁數(shù)：19 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

Airfast RF Power LDMOS Transistor

Designed for handheld two?way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large?signal, common?source amplifier applications in handheld radio equipment. Features ? Characterized for operation f

文件：195.94 Kbytes 頁數(shù)：13 Pages

恩XP

Airfast RF Power LDMOS Transistor

Designed for handheld two?way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large?signal, common?source amplifier applications in handheld radio equipment. Features ? Characterized for operation f

文件：195.94 Kbytes 頁數(shù)：13 Pages

恩XP

RF Power Field Effect Transistor

880 MHz, 10 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common-source amplifier applica

文件：574.41 Kbytes 頁數(shù)：15 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed primarily for CW large- signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

文件：1.19064 Mbytes 頁數(shù)：19 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

2--500 MHz, 600 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications. ? Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Wa

文件：1.4439 Mbytes 頁數(shù)：19 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體