25LC080BT-I/MSG集成電路（IC）的存儲(chǔ)器規(guī)格書(shū)PDF中文資料

25LC080BT-I/MSG屬于集成電路（IC）的存儲(chǔ)器。由美國(guó)微芯科技公司制造生產(chǎn)的25LC080BT-I/MSG存儲(chǔ)器存儲(chǔ)器是集成電路上用作數(shù)據(jù)存儲(chǔ)設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲(chǔ)容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

描述 Description

The Microchip Technology Inc. 25AA080A/B, 25LC080A/B (25XX080A/B*) are 8 Kbit Serial Electrically Erasable PROMs. The memory is accessed via a simple Serial Peripheral Interface? (SPI?) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through a Chip Select (CS) input.

特性 Features

? Max. clock 10 MHz

? Low-power CMOS technology

? 1024 x 8-bit organization

? 16 byte page (‘A’ version devices)

? 32 byte page (‘B’ version devices)

? Write cycle time: 5 ms max.

? Self-timed ERASE and WRITE cycles

? Block write protection

- Protect none, 1/4, 1/2 or all of array

? Built-in write protection

- Power-on/off data protection circuitry

- Write enable latch

- Write-protect pin

? Sequential read

? High reliability

- Endurance: 1,000,000 erase/write cycles

- Data retention: > 200 years

- ESD protection: > 4000V

? Temperature ranges supported;

- Industrial (I): -40°C to +85°C

- Automotive (E): -40°C to +125°C