Molded Unshielded RF Coils

文件：1.20267 Mbytes 頁數(shù)：1 Pages

API

Adapter kit

文件：66.46 Kbytes 頁數(shù)：1 Pages

FESTOFesto Corporation.

費斯托費斯托（中國）有限公司

Molded Unshielded RF Coils

文件：1.20267 Mbytes 頁數(shù)：1 Pages

API

Molded Unshielded RF Coils

文件：40.55 Kbytes 頁數(shù)：1 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

絲?。?a target="_blank" title="Marking" href="/25304/marking.html">25304；Package：DSBGA；CSD25304W1015 20-V P-Channel NexFET? Power MOSFET

1 Features 1? Ultra-Low Qg and Qgd ? Small Footprint ? Low Profile 0.62 mm Height ? Pb Free ? RoHS Compliant ? Halogen Free ? CSP 1 × 1.5 mm Wafer Level Package 2 Applications ? Battery Management ? Load Switch ? Battery Protection 3 Description This 27 mΩ, –20 V, P-Channel device

文件：476.64 Kbytes 頁數(shù)：11 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/25304/marking.html">25304；Package：DSBGA；CSD25304W1015 20-V P-Channel NexFET? Power MOSFET

1 Features 1? Ultra-Low Qg and Qgd ? Small Footprint ? Low Profile 0.62 mm Height ? Pb Free ? RoHS Compliant ? Halogen Free ? CSP 1 × 1.5 mm Wafer Level Package 2 Applications ? Battery Management ? Load Switch ? Battery Protection 3 Description This 27 mΩ, –20 V, P-Channel device

文件：476.64 Kbytes 頁數(shù)：11 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/25304/marking.html">25304；Package：DSBGA；CSD25304W1015 20-V P-Channel NexFET? Power MOSFET

1 Features 1? Ultra-Low Qg and Qgd ? Small Footprint ? Low Profile 0.62 mm Height ? Pb Free ? RoHS Compliant ? Halogen Free ? CSP 1 × 1.5 mm Wafer Level Package 2 Applications ? Battery Management ? Load Switch ? Battery Protection 3 Description This 27 mΩ, –20 V, P-Channel device

文件：476.64 Kbytes 頁數(shù)：11 Pages

TI

德州儀器

絲印：25304；Package：DSBGA；CSD25304W1015 20-V P-Channel NexFET? Power MOSFET

1 Features 1? Ultra-Low Qg and Qgd ? Small Footprint ? Low Profile 0.62 mm Height ? Pb Free ? RoHS Compliant ? Halogen Free ? CSP 1 × 1.5 mm Wafer Level Package 2 Applications ? Battery Management ? Load Switch ? Battery Protection 3 Description This 27 mΩ, –20 V, P-Channel device

文件：476.64 Kbytes 頁數(shù)：11 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/2530c04l/marking.html">2530C04L；Package：PG-DSO-8；MOSFET OptiMOS? 3 Power?Transistors, 40 V

Features ? Complementary N? and P?channel ? Very low on?resistance RDS(on) ? Superior thermal resistance ? 100% avalanche tested ? Pb?free lead plating; RoHS compliant ? Halogen?free according to IEC61249?2?21

文件：1.1634 Mbytes 頁數(shù)：18 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/2530/marking.html">2530；Package：SOT-23(DBV)；Current-Limited, Power-Distribution Switches

FEATURES 2? Single Power Switch ? Pin for Pin with Existing TI Switch Portfolio? ? Rated Currents of 0.5 A current? ±25% Accurate, Fixed, Constant Current Limit ? Fast Over-Current Response – 2 μs ? Operating Range: 2.7 V to 5.5 V ? Deglitched Fault Reporting ? Reverse Current Blocking

文件：1.1157 Mbytes 頁數(shù)：19 Pages

TI

德州儀器