絲?。?a target="_blank" title="Marking" href="/2312/marking.html">2312；Package：WSON；TPS923650/1 65V 1A/2A Boost/Buck-Boost LED Driver with PWM/Analog Dimming

1 Features ? 4.5V to 65V wide input range ? LED common cathode connection ? Integrated 300mΩ MOSFET: – Typical current limit (1.6A / 3.2A) – Switching frequency (400kHz / 1MHz) ? Advanced dimming options: – Analog dimming (200:1) – Fast PWM dimming (50ns pulse width) ? Full protection fea

文件：2.57338 Mbytes 頁(yè)數(shù)：44 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/2311/marking.html">2311；Package：QFN；GaAs INTEGRATED CIRCUIT

FEATURES ? High gain : GP = 37 dB TYP. ? Low noise : NF = 1.2 dB TYP. ? 12-pin plastic QFN package (3.0 × 3.0 × 0.75 mm)

文件：249.48 Kbytes 頁(yè)數(shù)：11 Pages

RENESAS

瑞薩

絲印：2311；Package：QFN；GaAs INTEGRATED CIRCUIT

FEATURES ? High gain : GP = 37 dB TYP. ? Low noise : NF = 1.2 dB TYP. ? 12-pin plastic QFN package (3.0 × 3.0 × 0.75 mm)

文件：249.48 Kbytes 頁(yè)數(shù)：11 Pages

RENESAS

瑞薩

絲?。?a target="_blank" title="Marking" href="/2315/marking.html">2315；Package：QFN；GaAs HBT INTEGRATED CIRCUIT

FEATURES ? Operation frequency : fopt = 2 400 to 2 500 MHz (2 450 MHz TYP.) ? Supply voltage : VCC1, 2 = 3.0 to 3.6 V (3.3 V TYP.) ? Control voltage : Venable = 0 to 2.95 V (2.85 V TYP.) ? Circuit current : ICC = 130 mA TYP. @ VCC1, 2 = 3.3 V, Venable = 2.85 V, Pout = +18 dBm (at OFDM modulat

文件：283.09 Kbytes 頁(yè)數(shù)：16 Pages

RENESAS

瑞薩

絲?。?a target="_blank" title="Marking" href="/2315/marking.html">2315；Package：QFN；GaAs HBT INTEGRATED CIRCUIT

FEATURES ? Operation frequency : fopt = 2 400 to 2 500 MHz (2 450 MHz TYP.) ? Supply voltage : VCC1, 2 = 3.0 to 3.6 V (3.3 V TYP.) ? Control voltage : Venable = 0 to 2.95 V (2.85 V TYP.) ? Circuit current : ICC = 130 mA TYP. @ VCC1, 2 = 3.3 V, Venable = 2.85 V, Pout = +18 dBm (at OFDM modulat

文件：283.09 Kbytes 頁(yè)數(shù)：16 Pages

RENESAS

瑞薩

絲印：2317；Package：TQFN；GaAs HBT INTEGRATED CIRCUIT

FEATURES ? Operating frequency : fopt = 2 400 to 2 500 MHz (L-band) : fopt = 4 900 to 5 850 MHz (H-band) ? Supply voltage : VCC (H), (L) = 3.0 to 3.6 V (3.3 V TYP.) ? Control voltage : Venable (H), (L) = 0 to 2.9 V (2.8 V TYP.) ? Circuit current : ICC (L) = 125 mA TYP. @ Pout = +18 dBm, 11g O

文件：238.21 Kbytes 頁(yè)數(shù)：11 Pages

RENESAS

瑞薩

絲?。?a target="_blank" title="Marking" href="/2317/marking.html">2317；Package：TQFN；GaAs HBT INTEGRATED CIRCUIT

FEATURES ? Operating frequency : fopt = 2 400 to 2 500 MHz (L-band) : fopt = 4 900 to 5 850 MHz (H-band) ? Supply voltage : VCC (H), (L) = 3.0 to 3.6 V (3.3 V TYP.) ? Control voltage : Venable (H), (L) = 0 to 2.9 V (2.8 V TYP.) ? Circuit current : ICC (L) = 125 mA TYP. @ Pout = +18 dBm, 11g O

文件：238.21 Kbytes 頁(yè)數(shù)：11 Pages

RENESAS

瑞薩

絲?。?a target="_blank" title="Marking" href="/231b/marking.html">231B；Zener Diodes

文件：298.22 Kbytes 頁(yè)數(shù)：5 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/2310bt/marking.html">2310BT；Package：TO-247AB；PNP Power Transistors

文件：1.04777 Mbytes 頁(yè)數(shù)：7 Pages

FUTUREWAFER

絲印：2310；Package：SOT-23-3；N-Channel Enhancement MOSFET

文件：108.62 Kbytes 頁(yè)數(shù)：1 Pages

KEXIN

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