1.5 Watt - 20 Volts, Class C Microwave 2300 MHz

GENERAL DESCRIPTION The 2301 is a COMMON BASE transistor capable of providing 1.5 Watts Class C, RF output power at 2300 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed

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GHZTECH

Digital electro-pneumatic positioner for integrated mounting on process control valves

The compact positioner device Type 8692 is optimised for integrated mounting on the pneumatic actuators in the process valve series Type 23xx/2103 and is specially designed for the requirements of a hygienic process environment. The pilot air duct is integrated into the actuator without externa

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BURKERT

寶帝流體控制系統(tǒng)

Digital electropneumatic process controller for integrated mounting on process control valves

The compact process controller device Type 8693 is optimised for integrated mounting on the pneumatic actuators in the Type 23xx/2103 process valve series and is specially designed for the requirements of a hygienic process environment. The actual value of the process factor is directly supplie

文件：1.66174 Mbytes 頁(yè)數(shù)：18 Pages

BURKERT

寶帝流體控制系統(tǒng)

Digital electropneumatic positioner SideControl

The robust and compact positioner is designed with standardisation acc. to IEC 60534 - 6 - 1 or VDI/VDE 3845 (IEC 60534 - 6 - 2) for assembly onto linear and rotary actuators. In addition, the variant with remote position sensor can be combined with Bürkert process control valves for closed-loo

文件：2.59459 Mbytes 頁(yè)數(shù)：30 Pages

BURKERT

寶帝流體控制系統(tǒng)

Digital electropneumatic Process Controller SideControl

The device Type 8793 digital process controller is designed with standardisation according to IEC 60534 - 6 - 1 or VDI/VDE 3845 (IEC 60534 - 6 - 2) for assembly to linear and rotary actuators. The variant with remote position sensor can also be used to control Bürkert process control valves. Th

文件：2.91694 Mbytes 頁(yè)數(shù)：31 Pages

BURKERT

寶帝流體控制系統(tǒng)

SOT-23 Plastic-Encapsulate MOSFETS

文件：5.03147 Mbytes 頁(yè)數(shù)：5 Pages

DGNJDZ

南晶電子

10V P-Channel Enhanced MOS FET

文件：171.02 Kbytes 頁(yè)數(shù)：3 Pages

FUMAN

富滿微

-2.8A竊?20V P-CHANNEL MOSFET

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KIA

可易亞半導(dǎo)體

Snap Bushings

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HEYCO

絲?。?strong>2301；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description The 2301A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

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GOFORD

谷峰半導(dǎo)體