絲印：2301；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description The 2301 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：821.94 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?strong>2301；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description The 2301A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.01208 Mbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?strong>2301；Package：SOT23；P-Channel Enhancement-Mode MOS FETs

Product Summary Vps = -20V,Ip = -3A Rosion)

文件：12.01605 Mbytes 頁數(shù)：6 Pages

TECHPUBLIC

臺舟電子

絲印：2301；Package：SOT-363；P-Channel Enhancement Mode Power MOSFET

General Features VDS = -20V,ID = -3A RDS(ON)

文件：175.06 Kbytes 頁數(shù)：7 Pages

RECTRON

麗正國際

絲?。?strong>2301；Package：SOT23；P-Channel Enhancement-Mode MOS FETs

Application @Battery protection @ Load switch @ Power management

文件：1.73088 Mbytes 頁數(shù)：6 Pages

TECHPUBLIC

臺舟電子

絲?。?strong>2301；Package：SOT23；P-Channel Enhancement-Mode MOS FETs

Application @Batery protection @Load switch @Power management

文件：2.22164 Mbytes 頁數(shù)：6 Pages

TECHPUBLIC

臺舟電子

絲?。?strong>2301；Package：SOT23；P-Channel Enhancement-Mode MOS FETs

Application @Battery protection ?Load switch @ Power management

文件：13.40098 Mbytes 頁數(shù)：6 Pages

TECHPUBLIC

臺舟電子

絲?。?strong>2301；Package：SOT23；P-Channel Enhancement-Mode MOS FETs

Application Battery protection Load switch Power management

文件：1.71453 Mbytes 頁數(shù)：6 Pages

TECHPUBLIC

臺舟電子

絲?。?strong>2301；Package：SOT23；P-Channel Enhancement-Mode MOS FETs

Application @Battery protection ?Load switch @ Power management

文件：1.70895 Mbytes 頁數(shù)：6 Pages

TECHPUBLIC

臺舟電子

絲?。?strong>2301；Package：HVSSOP；TPS923650/1 65V 1A/2A Boost/Buck-Boost LED Driver with PWM/Analog Dimming

1 Features ? 4.5V to 65V wide input range ? LED common cathode connection ? Integrated 300mΩ MOSFET: – Typical current limit (1.6A / 3.2A) – Switching frequency (400kHz / 1MHz) ? Advanced dimming options: – Analog dimming (200:1) – Fast PWM dimming (50ns pulse width) ? Full protection fea

文件：2.57338 Mbytes 頁數(shù)：44 Pages

TI

德州儀器