絲?。?strong>230；Package：TSOT-23；24V 3A Integrated Switching Regulator

? 4.5V to 24V input supply range ? Up to 3A output current ? Integrated high-side (85mΩ) and low-side (45mΩ) MOSFETs ? 400μA quiescent current ? Minimum on-time of 60ns ? Minimum off-time of 275ns ? 0.765V reference voltage with 2% accuracy ? PFM mode under light load condition ? Curr

文件：4.07281 Mbytes 頁數(shù)：24 Pages

RENESAS

瑞薩

絲?。?strong>230；300 mA, 28 V low-dropout voltage regulator, with 5 關(guān)A quiescent current

文件：721.63 Kbytes 頁數(shù)：21 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/2300f/marking.html">2300F；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The 2300F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：984.1 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/2300f/marking.html">2300F；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The 2300FA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.15718 Mbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲印：2301；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description The 2301 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：821.94 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲印：2301；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description The 2301A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.01208 Mbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲印：2301；Package：SOT23；P-Channel Enhancement-Mode MOS FETs

Product Summary Vps = -20V,Ip = -3A Rosion)

文件：12.01605 Mbytes 頁數(shù)：6 Pages

TECHPUBLIC

臺舟電子

絲?。?a target="_blank" title="Marking" href="/2301/marking.html">2301；Package：SOT-363；P-Channel Enhancement Mode Power MOSFET

General Features VDS = -20V,ID = -3A RDS(ON)

文件：175.06 Kbytes 頁數(shù)：7 Pages

RECTRON

麗正國際

絲?。?a target="_blank" title="Marking" href="/2301/marking.html">2301；Package：SOT23；P-Channel Enhancement-Mode MOS FETs

Application @Battery protection @ Load switch @ Power management

文件：1.73088 Mbytes 頁數(shù)：6 Pages

TECHPUBLIC

臺舟電子

絲印：2301；Package：SOT23；P-Channel Enhancement-Mode MOS FETs

Application @Batery protection @Load switch @Power management

文件：2.22164 Mbytes 頁數(shù)：6 Pages

TECHPUBLIC

臺舟電子