絲印：22；DIGITAL TRANSISTOR

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design e

文件：704.49 Kbytes 頁數(shù)：9 Pages

ROHM

羅姆

絲?。?strong>22；Package：SOT-666；40 V low VCEsat NPN transistor

DESCRIPTION NPN low VCEsat transistor with high current capability in a SOT666 plastic package. PNP complement: PBSS5140V. FEATURES ? 300 mW total power dissipation ? Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thin package ? Improved thermal behaviour due to flat leads ? Excellent coplanarit

文件：62.34 Kbytes 頁數(shù)：12 Pages

PHI

PHI

絲?。?strong>22；Package：SOD-323；Zener diode

Features 1) Compact, 2-pin mini-mold type for high-density mounting. (UMD2) 2) Compatible with chip mounter for automated production. 3) High reliability Applications Constant voltage control

文件：58.81 Kbytes 頁數(shù)：3 Pages

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絲?。?strong>22；Package：SOT-353；SINGLE GENERAL PURPOSE LOW VOLTAGE COMPARATOR

文件：384.39 Kbytes 頁數(shù)：14 Pages

BCDSEMI

新進半導(dǎo)體

絲?。?strong>22；Package：SMT3；100mA / 50V Digital transistors (with built-in resistors)

文件：167.85 Kbytes 頁數(shù)：3 Pages

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羅姆

絲?。?strong>22；Package：VMT3；100mA / 50V Digital transistors (with built-in resistors)

文件：167.85 Kbytes 頁數(shù)：3 Pages

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羅姆

絲?。?strong>22；Package：UMT3；100mA / 50V Digital transistors (with built-in resistors)

文件：167.85 Kbytes 頁數(shù)：3 Pages

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羅姆

絲?。?strong>22；Package：LLDS；Zener diode

文件：186.59 Kbytes 頁數(shù)：5 Pages

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羅姆

絲?。?strong>22；Package：LLDS；Zener diode

文件：185.65 Kbytes 頁數(shù)：5 Pages

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羅姆

絲?。?strong>22；Package：LLDS；Zener diode

文件：186.52 Kbytes 頁數(shù)：5 Pages

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