絲?。?strong>21P；Package：SOT323；N-Channel Enhancement Mode MOSFET

Features VDS = 20V RDS(ON) =300mQ (typ.) @ VGS= 2.5V RDS(ON) =250mQ (typ.) @ VGS= 4.5V ESD Protected up to 2KV

文件：2.5436 Mbytes 頁(yè)數(shù)：5 Pages

TECHPUBLIC

臺(tái)舟電子

絲?。?strong>21P；Package：SOT323；N-Channel Enhancement Mode MOSFET

Features ● Surface Mount Package ● N-Channel Switch with Low Ros(on) ● Operated at Low Logic Level Gate Drive ● ESD Protected

文件：10.95511 Mbytes 頁(yè)數(shù)：5 Pages

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絲?。?strong>21P；Package：SOT323；N-Channel Enhancement Mode MOSFET

文件：2.64683 Mbytes 頁(yè)數(shù)：5 Pages

TECHPUBLIC

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絲印：21P；Package：SOT323；N-Channel Enhancement Mode MOSFET

文件：2.64703 Mbytes 頁(yè)數(shù)：5 Pages

TECHPUBLIC

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絲印：21P；Package：SOT323；N-Channel Enhancement Mode MOSFET

文件：2.65517 Mbytes 頁(yè)數(shù)：5 Pages

TECHPUBLIC

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絲印：21P；Package：SOT-23；P-channel MOSFET -20V, -0.5A

文件：400.69 Kbytes 頁(yè)數(shù)：6 Pages

TOREX

特瑞仕

絲印：21P6LLF6；Package：TO-220FP；P-channel -60 V, 25.5 mΩ typ., -21 A STripFET? F6 Power MOSFET in a TO-220FP package

Features ? Very low on-resistance ? Very low gate charge ? High avalanche ruggedness ? Low gate drive power loss Applications ? Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET? F6 technology, with a new trench gate structure. Th

文件：632.7 Kbytes 頁(yè)數(shù)：13 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/21pf/marking.html">21PF；Package：SOT-23；TPS7A03 Nanopower IQ, 200-nA, 200-mA, Low-Dropout Voltage Regulator With Fast Transient Response

1 Features ? Ultra-low IQ: 200 nA (typ), even in dropout ? Shutdown IQ: 3 nA (typ) ? Excellent transient response (1 mA to 50 mA) –

文件：3.2169 Mbytes 頁(yè)數(shù)：50 Pages

TI

德州儀器

絲印：21PF；Package：SOT-23；TPS7A03 Nanopower IQ, 200-nA, 200-mA, Low-Dropout Voltage Regulator With Fast Transient Response

1 Features ? Ultra-low IQ: 200 nA (typ), even in dropout ? Shutdown IQ: 3 nA (typ) ? Excellent transient response (1 mA to 50 mA) –

文件：3.21839 Mbytes 頁(yè)數(shù)：50 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/21pf/marking.html">21PF；Package：SOT-23；TPS7A03 Nanopower IQ, 200-nA, 200-mA, Low-Dropout Voltage Regulator With Fast Transient Response

1 Features ? Ultra-low IQ: 200 nA (typ), even in dropout ? Shutdown IQ: 3 nA (typ) ? Excellent transient response (1 mA to 50 mA) –

文件：3.21861 Mbytes 頁(yè)數(shù)：50 Pages

TI

德州儀器